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BZV85C4V7 PDF预览

BZV85C4V7

更新时间: 2024-02-17 11:47:40
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
21页 612K
描述
4.7V, 1W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

BZV85C4V7 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-41
包装说明:O-LALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.15
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:13 ΩJEDEC-95代码:DO-41
JESD-30 代码:O-LALF-W2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:1 W
认证状态:Not Qualified标称参考电压:4.7 V
最大反向电流:3 µA子类别:Voltage Reference Diodes
表面贴装:NO技术:ZENER
端子面层:Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:40
电压温度Coeff-Max:0.7 mV/ °C最大电压容差:5%
工作测试电流:45 mABase Number Matches:1

BZV85C4V7 数据手册

 浏览型号BZV85C4V7的Datasheet PDF文件第2页浏览型号BZV85C4V7的Datasheet PDF文件第3页浏览型号BZV85C4V7的Datasheet PDF文件第4页浏览型号BZV85C4V7的Datasheet PDF文件第5页浏览型号BZV85C4V7的Datasheet PDF文件第6页浏览型号BZV85C4V7的Datasheet PDF文件第7页 
BZV85 series  
Voltage regulator diodes  
Rev. 03 — 10 November 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Medium-power voltage regulator diodes in small hermetically sealed leaded  
SOD66 (DO-41) glass packages.  
The diodes are available in the normalized E24 approximately ±5 % tolerance range.  
The series consists of 33 types with nominal working voltages from 3.6 V to 75 V.  
1.2 Features  
I Total power dissipation: max. 1.3 W  
I Tolerance series: approximately ±5 %  
I Non-repetitive peak reverse power  
dissipation: max. 60 W  
I Working voltage range:  
nominal 3.3 V to 75 V (E24 range)  
I Small hermetically sealed glass  
package  
1.3 Applications  
I Stabilization purposes  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max Unit  
VF  
forward voltage  
IF = 50 mA  
-
-
1
V
Ptot  
total power dissipation  
[1]  
Tamb = 25 °C;  
-
-
1
W
lead length 10 mm  
[2]  
[3]  
-
-
-
-
1.3  
60  
W
W
PZSM  
non-repetitive peak reverse  
power dissipation  
square wave;  
tp = 100 µs  
[1] Device mounted on a Printed-Circuit Board (PCB) with 1 cm2 copper area per lead.  
[2] If the leads are kept at Ttp = 55 °C at 4 mm from body.  
[3] Tj = 25 °C prior to surge  

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