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BZV55C10BSC-T PDF预览

BZV55C10BSC-T

更新时间: 2024-11-15 13:06:03
品牌 Logo 应用领域
RECTRON 稳压二极管齐纳二极管测试局域网
页数 文件大小 规格书
5页 192K
描述
Zener Diode,

BZV55C10BSC-T 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.67
二极管类型:ZENER DIODEJESD-609代码:e3
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:MATTE TIN OVER NICKEL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BZV55C10BSC-T 数据手册

 浏览型号BZV55C10BSC-T的Datasheet PDF文件第2页浏览型号BZV55C10BSC-T的Datasheet PDF文件第3页浏览型号BZV55C10BSC-T的Datasheet PDF文件第4页浏览型号BZV55C10BSC-T的Datasheet PDF文件第5页 
BZV55C-BS  
SERIES  
4.7V to 36V  
SILICON PLANAR ZENER DIODE  
FEATURES  
Zener Voltage Range 4.7 to 36 Volts  
LL-34 (Mini-MELF) Package  
*
*
*
Hermetically Sealed, Glass Silicon Diodes  
SOD-80C  
.059(1.50)  
.056(1.42)  
R.004(0.10)  
.112(0.30)  
.146(3.70)  
.130(3.30)  
.057(1.45)  
.053(1.35)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted )  
RATINGS  
SYMBOL  
VALUE  
250  
UNITS  
mA  
Average Forward Current (averaged Over any 20 ms period)  
Repetitive Peak Forward Current  
I
F(av)  
I
250  
mA  
FRM  
=50OC  
P
mW  
500  
Total Power Dissipation up to T  
flange  
tot  
O
Up to Ta=50 C and Mounted on a Ceramic Substrate of 10mm x 10  
P
400  
mW  
tot  
mm x 0.6mm  
Non-Reperitive Peak Reverse Power Dissipation t=100us,T =150OC  
J
P
30  
W
ZSM  
-65 to +200  
OC  
Storage Temperature  
T
stg  
OC  
T
J
Junction Temperature  
200  
THERMAL RESISTANCE  
0.30  
0.38  
Rth(j-tp)  
Rth(j-a)  
K/mW  
K/mW  
From Junction to tie-point(flanges)  
Form Junction to Ambient when Mounted on a Ceramic Substrate of  
10mm x 10mm x 0.6mm  
VD 2007-11  

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