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BZV55-B9V1-D2 PDF预览

BZV55-B9V1-D2

更新时间: 2024-11-15 03:30:55
品牌 Logo 应用领域
威世 - VISHAY 测试二极管
页数 文件大小 规格书
8页 266K
描述
Zener Diode, 9.1V V(Z), 2%, 0.4W, Silicon, Unidirectional, GLASS, MINIMELF-2

BZV55-B9V1-D2 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:MELF包装说明:GLASS, MINIMELF-2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.83外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:O-LELF-R2
JESD-609代码:e2湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:200 °C最低工作温度:-65 °C
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):250
极性:UNIDIRECTIONAL最大功率耗散:0.4 W
认证状态:Not Qualified标称参考电压:9.1 V
表面贴装:YES技术:ZENER
端子面层:TIN SILVER端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:40
最大电压容差:2%工作测试电流:5 mA

BZV55-B9V1-D2 数据手册

 浏览型号BZV55-B9V1-D2的Datasheet PDF文件第2页浏览型号BZV55-B9V1-D2的Datasheet PDF文件第3页浏览型号BZV55-B9V1-D2的Datasheet PDF文件第4页浏览型号BZV55-B9V1-D2的Datasheet PDF文件第5页浏览型号BZV55-B9V1-D2的Datasheet PDF文件第6页浏览型号BZV55-B9V1-D2的Datasheet PDF文件第7页 
BZV55 Series  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Zener Diodes  
VZ Range 2.4 to 75V  
Power Dissipation 500mW  
MiniMELF (SOD-80C)  
Mounting Pad Layout  
0.098(2.50)  
MAX  
Cathode Mark  
0.049(1.25) MIN  
0.063 (1.6)  
0.055 (1.4)  
0.079(2.00) MIN  
0.019 (0.48)  
0.011 (0.28)  
0.142 (3.6)  
0.134 (3.4)  
0.197(5.00)  
REF  
Dimensions in inches and (millimeters)  
Mechanical Data  
Features  
Case: MiniMELF Glass Case (SOD-80C)  
• Silicon Planar Power Zener Diodes  
Weight: approx. 0.05g  
• For use as low voltage stabilizer or voltage  
reference.  
Cathode band color: Blue  
• The Zener voltages are graded according to the  
international E 24 standard. Higher Zener voltages  
and 1% tolerance available on request.  
Packaging codes/options:  
D1/10K per 13reel (8mm tape), 20K/box  
D2/2.5K per 7reel (8mm tape), 20K/box  
• Diodes available in these tolerance series:  
±2% BZV55-B, ±3% BZV55-F, ±5% BZV55-C.  
Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
Zener Current see Table Characteristics”  
Power Dissipation at Tflange = 50°C  
Power Dissipation at TA = 50°C  
Junction temperature  
Ptot  
Ptot  
TJ  
500  
400(1)  
mW  
mW  
°C  
65 to +200  
65 to +200  
250  
Storage temperature range  
TS  
°C  
Continuous Forward Current  
IF  
mA  
Thermal Resistance Junction to Ambient Air  
Thermal Resistance Junction to Lead  
Peak reverse power dissipation (non-repetitive) tp = 100µs  
RθJA  
RθJL  
PZSM  
0.38(1)  
°C/mW  
°C/mW  
W
0.30  
30(2)  
Notes: (1) Mounted on ceramic substrate 10mm x 10mm x 0.6mm  
(2) Tj = 150°C  
Document Number 88315  
26-Apr-02  
www.vishay.com  
1

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