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BZT52C5V1H PDF预览

BZT52C5V1H

更新时间: 2024-11-03 14:55:55
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 1981K
描述
SOD-123

BZT52C5V1H 数据手册

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NGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
SOD-123 Plastic-Encapsulate Diodes  
SOD-123  
BZT52C5V1H  
ZENER DIODE  
FEATURES  
z
z
z
z
Planar Die Construction  
General purpose, Medium current  
Ideally suited for automated assembly processes  
Available in Lead free version  
APPLICATION  
z
Mobile Phone  
MARKING: H8  
The marking bar indicates the cathode  
dot = Green molding compound device.  
Solid  
MAXIMUM RATINGS(Operating temperature range applies unless otherwise specified)  
Symbol  
PD  
Parameter  
Power Dissipation(Note 1)  
Value  
500  
Unit  
mW  
/W  
RΘJA  
Thermal Resistance from Junction to Ambient  
250  
Operation Junction and Storage Temperature Range  
TJ,Tstg  
-55~+150  
ELECTRICAL CHARACTERISTICS(Ta=25unless otherwise specified)  
Parameter  
Symbol  
VZ  
Test conditions  
IZT=5mA  
Min  
Typ  
Max  
5.5  
50  
Unit  
Zener Voltage Range (Note 2)  
5.1  
V
ZZT  
IZT=5mA  
IZK=1mA  
VR=2V  
Maximum Zener Impedance(Note 3)  
ZZk  
450  
2
μA  
μA  
V
Maximum Reverse Current (Note 2)  
Forward Voltage (Note 2)  
IR  
VR=4.2V  
IF = 10mA  
50  
VF  
0.9  
Device mounted on a 1 in.2 ceramic PCB which spread 2 ounces of copper.  
Notes: 1.  
2.Short duration test pulse used to minimize self-heating effect.  
3. f=1kHZ  
www.jscj-elec.com  
1
Rev. - 2.1  

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