Datasheet > BZT52C5V1H

BZT52C5V1H

更新时间： 2024-11-25 14:55:55

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1981K
描述
SOD-123

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BZT52C5V1H 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOD-123 Plastic-Encapsulate Diodes

SOD-123

BZT52C5V1H

ZENER DIODE

FEATURES

Planar Die Construction

General purpose, Medium current

Ideally suited for automated assembly processes

Available in Lead free version

APPLICATION

Mobile Phone

MARKING: H8

The marking bar indicates the cathode

dot = Green molding compound device.

Solid

MAXIMUM RATINGS(Operating temperature range applies unless otherwise specified)

Symbol

P_D

Parameter

Power Dissipation(Note 1)

Value

500

Unit

℃/W

℃

R_ΘJA

Thermal Resistance from Junction to Ambient

250

Operation Junction and Storage Temperature Range

T_J,T_stg

-55~+150

ELECTRICAL CHARACTERISTICS(T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_Z

Test conditions

I_ZT=5mA

Min

Typ

Max

5.5

Unit

Zener Voltage Range (Note 2)

5.1

Z_ZT

I_ZT=5mA

I_ZK=1mA

V_R=2V

Maximum Zener Impedance(Note 3)

Ω

Z_Zk

450

μA

Maximum Reverse Current (Note 2)

Forward Voltage (Note 2)

I_R

V_R=4.2V

I_F= 10mA

V_F

0.9

Device mounted on a 1 in.²ceramic PCB which spread 2 ounces of copper.

Notes: 1.

2.Short duration test pulse used to minimize self-heating effect.

3. f=1kH_Z

www.jscj-elec.com

Rev. - 2.1

12 3 4

中文翻译

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