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BZT52C5V1-HE3-08 PDF预览

BZT52C5V1-HE3-08

更新时间: 2024-11-02 19:20:23
品牌 Logo 应用领域
威世 - VISHAY 测试光电二极管
页数 文件大小 规格书
8页 133K
描述
Zener Diode, 5.1V V(Z), 5.88%, 0.5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC PACKAGE-2

BZT52C5V1-HE3-08 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:R-PDSO-G2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
Factory Lead Time:10 weeks风险等级:5.05
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:60 ΩJESD-30 代码:R-PDSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
参考标准:AEC-Q101标称参考电压:5.1 V
子类别:Voltage Reference Diodes表面贴装:YES
技术:ZENER端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10最大电压容差:5.88%
工作测试电流:5 mABase Number Matches:1

BZT52C5V1-HE3-08 数据手册

 浏览型号BZT52C5V1-HE3-08的Datasheet PDF文件第2页浏览型号BZT52C5V1-HE3-08的Datasheet PDF文件第3页浏览型号BZT52C5V1-HE3-08的Datasheet PDF文件第4页浏览型号BZT52C5V1-HE3-08的Datasheet PDF文件第5页浏览型号BZT52C5V1-HE3-08的Datasheet PDF文件第6页浏览型号BZT52C5V1-HE3-08的Datasheet PDF文件第7页 
BZT52-Series  
Vishay Semiconductors  
www.vishay.com  
Small Signal Zener Diodes  
FEATURES  
Available  
• Silicon planar Zener diodes  
• The Zener voltages are graded according to  
the international E24 standard  
• AEC-Q101 qualified available  
• ESD capability according to AEC-Q101:  
Human body model > 8 kV  
Machine model > 800 V  
• Base P/N-E3 - RoHS-compliant, commercial  
grade  
PRIMARY CHARACTERISTICS  
PARAMETER  
VZ range nom.  
Test current IZT  
VZ specification  
Int. construction  
VALUE  
2.4 to 75  
2.5; 5  
UNIT  
V
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
mA  
Pulse current  
Single  
ORDERING INFORMATION  
DEVICE NAME  
ORDERING CODE  
TAPED UNITS PER REEL  
MINIMUM ORDER QUANTITY  
BZT52C2V4-E3-08 to BZT52C75-E3-08  
BZT52B2V4-E3-08 to BZT52B75-E3-08  
BZT52C2V4-HE3-08 to BZT52C75-HE3-08  
BZT52B2V4-HE3-08 to BZT52B75-HE3-08  
BZT52C2V4-E3-18 to BZT52C75-E3-18  
BZT52B2V4-E3-18 to BZT52B75-E3-18  
BZT52C2V4-HE3-18 to BZT52C75-HE3-18  
BZT52B2V4-HE3-18 to BZT52B75-HE3-18  
3000 (8 mm tape on 7" reel)  
15 000/box  
BZT52-series  
10 000 (8 mm tape on 13" reel)  
10 000/box  
PACKAGE  
MOLDING COMPOUND  
WEIGHT  
MOISTURE SENSITIVITY  
LEVEL  
PACKAGE NAME  
SOLDERING CONDITIONS  
FLAMMABILITY RATING  
MSL level 1  
(according J-STD-020)  
SOD-123  
10.3 mg  
UL 94 V-0  
260 °C/10 s at terminals  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Diode on ceramic substrate 0.7 mm; 5 mm2  
Ptot  
500  
mW  
pad areas  
Power dissipation  
Diode on ceramic substrate 0.7 mm; 2.5 mm2  
Ptot  
410  
mW  
pad areas  
Zener current  
See table “Electrical Characteristics “  
Valid provided that electrodes are kept at  
ambient temperature  
Thermal resistance junction to ambient air  
RthJA  
300  
K/W  
Tj  
Junction temperature  
150  
°C  
°C  
°C  
Tstg  
Top  
Storage temperature range  
Operating temperature range  
-65 to +150  
-55 to +150  
Rev. 1.9, 08-Nov-16  
Document Number: 85760  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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