Datasheet > BZT52C36-T1

BZT52C36-T1

更新时间： 2024-11-13 19:58:11

品牌	Logo	应用领域
WTE		测试光电二极管
页数	文件大小	规格书
5页	77K
描述
Zener Diode, 36V V(Z), 5%, 0.41W, Silicon, Unidirectional, PLASTIC PACKAGE-2

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BZT52C36-T1 数据手册

WTE

POWER SEMICONDUCTORS

BZT52C2V4 – BZT52C51

410mW SURFACE MOUNT ZENER DIODE

Features

Planar Die Construction

410mW Power Dissipation

2.4 – 51V Nominal Zener Voltage

5% Standard Vz Tolerance

Designed for Surface Mount Application

Plastic Material – UL Recognition Flammability

Classification 94V-O

SOD-123

Dim

Min

3.6

2.5

1.4

0.5

—

Max

3.9

2.8

1.8

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

0.7

0.2

0.4

0.95

—

Mechanical Data

1.35

0.12

Case: SOD-123, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

All Dimensions in mm

Polarity: Cathode Band

Weight: 0.01 grams (approx.)

Marking: Device Code, See Page 2

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 5

Maximum Ratings ^@T_A^{=25°C unless otherwise specified}

Characteristic

Peak Pulse Power Dissipation at T_A= 25°C (Note 1)

Forward Voltage @ I^F= 10mA

Symbol

Value

Unit

P^d

V^F

410

0.9

Thermal Resistance Junction to Ambient (Note 1)

R^ꢀ^JA

T^j, T^STG

300

°C/W

°C

Operating and Storage Temperature Range

-65 to +150

Note: 1. Diode on ceramic substrate 10mm x 8mm x 0.7mm.

BZT52C2V4 – BZT52C51

1 of 5

12 3 4 5

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与BZT52C36-T1相关器件

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