Datasheet > BZT52C28V2

BZT52C28V2

更新时间： 2022-05-14 22:10:01

品牌	Logo	应用领域
时科 - SHIKUES		/
页数	文件大小	规格书
3页	478K
描述
Silicon Planar Zener Diodes

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数据手册

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BZT52C28V2 数据手册

BZT52C2V0 THRU BZT52C75

Silicon Planar Zener Diodes

PINNING

FEATURES

DESCRIPTION

Cathode

Anode

• Total power dissipation: Max. 500mW.

• Wide zener reverse voltage range 2.0V to 75V.

• Small plastic package suitable for surface mounted design.

• Tolerance approximately±5%

MECHANICAL DATA

▪Case: SOD-123

Simplified outline SOD-123 and symbol

▪Terminals: Solderable per MIL-STD-750, Method 2026

Absolute Maximum Ratings And Characteristics （Ta = 25 °C）

Symbol

Parameter

Value

500

Unit

Power Dissipation

P_tot

V_F

Forward Voltage at IF = 10 mA

0.9

(1)

Typical thermal resistance juncting to ambient

Operating and Storage Temperature Range

R_θJA

°C/W

°C

340

T_j, T_stg

-55 ~ +150

(1) Thermal resistance from junction to ambient at P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper areas pads.

Fig.1 Maximum Continuous Power Derating

Fig.2 Typical Transient Thermal Impedance

0.6

0.5

0.4

0.3

0.2

0.1

0.0

2000

1000

100

125

150

175

0.01

0.1

100

T_c,Case Temperature (°C)

t, Pulse Duration（sec）

REV.08

1 of 3

12 3

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