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BZT52C26V2 PDF预览

BZT52C26V2

更新时间: 2024-11-27 02:44:07
品牌 Logo 应用领域
时科 - SHIKUES /
页数 文件大小 规格书
3页 478K
描述
Silicon Planar Zener Diodes

BZT52C26V2 数据手册

 浏览型号BZT52C26V2的Datasheet PDF文件第2页浏览型号BZT52C26V2的Datasheet PDF文件第3页 
BZT52C2V0 THRU BZT52C75  
Silicon Planar Zener Diodes  
PINNING  
FEATURES  
PIN  
1
2
DESCRIPTION  
Cathode  
Anode  
• Total power dissipation: Max. 500mW.  
• Wide zener reverse voltage range 2.0V to 75V.  
• Small plastic package suitable for surface mounted design.  
• Tolerance approximately±5%  
MECHANICAL DATA  
1
Case: SOD-123  
Simplified outline SOD-123 and symbol  
Terminals: Solderable per MIL-STD-750, Method 2026  
Absolute Maximum Ratings And Characteristics Ta = 25 °C)  
Symbol  
Parameter  
Value  
500  
Unit  
mW  
V
Power Dissipation  
Ptot  
VF  
Forward Voltage at IF = 10 mA  
0.9  
(1)  
Typical thermal resistance juncting to ambient  
Operating and Storage Temperature Range  
RθJA  
°C/W  
°C  
340  
Tj, Tstg  
-55 ~ +150  
(1) Thermal resistance from junction to ambient at P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper areas pads.  
Fig.1 Maximum Continuous Power Derating  
Fig.2 Typical Transient Thermal Impedance  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
2000  
1000  
100  
10  
25  
50  
75  
100  
125  
150  
175  
0.01  
0.1  
1
10  
100  
Tc,Case Temperature (°C)  
t, Pulse Durationsec)  
REV.08  
1 of 3  

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