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BZT52C12-V-GS08 PDF预览

BZT52C12-V-GS08

更新时间: 2024-09-25 12:52:39
品牌 Logo 应用领域
威世 - VISHAY 稳压二极管齐纳二极管测试光电二极管
页数 文件大小 规格书
9页 133K
描述
Small Signal Zener Diodes

BZT52C12-V-GS08 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:R-PDSO-G2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.09Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODE最大动态阻抗:90 Ω
JESD-30 代码:R-PDSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:0.41 W
认证状态:Not Qualified标称参考电压:12 V
子类别:Voltage Reference Diodes表面贴装:YES
技术:ZENER端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10最大电压容差:5.39%
工作测试电流:5 mABase Number Matches:1

BZT52C12-V-GS08 数据手册

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BZT52-V-Series  
Vishay Semiconductors  
Small Signal Zener Diodes  
Features  
• Silicon planar power zener diodes  
• These diodes are also available in other  
case styles and other configurations  
including: the SOT-23 case with type  
designation BZX84 series, the dual zener  
diode common anode configuration in the  
SOT-23 case with type designation AZ23  
series and the dual zener diode common cathode  
configuration in the SOT-23 case with type  
designation DZ23 series.  
17431  
• The zener voltages are graded according to the  
international E 24 standard.  
• AEC-Q101 qualified  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
Mechanical Data  
Case: SOD-123  
Weight: approx. 10.3 mg  
Packaging codes/options:  
GS18/10 k per 13 " reel (8 mm tape), 10 k/box  
GS08/3 k per 7 " reel (8 mm tape), 15 k/box  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
Zener current see table  
" Characteristics "  
500 2)  
410 1)  
Ptot  
Ptot  
Power dissipation  
Power dissipation  
mW  
mW  
1) Diode on ceramic substrate 0.7 mm; 2.5 mm2 pad areas  
2) Diode on ceramic substrate 0.7 mm; 5 mm2 pad areas  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
300 1)  
Unit  
Thermal resistance junction to  
ambient air  
°C/W  
TJ  
Junction temperature  
150  
°C  
°C  
TS  
Storage temperature range  
- 65 to + 150  
1) Valid provided that electrodes are kept at ambient temperature  
Document Number 85760  
www.vishay.com  
1
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Rev. 1.6, 26-Aug-10  

BZT52C12-V-GS08 替代型号

型号 品牌 替代类型 描述 数据表
BZT52C12-13-F DIODES

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Zener Diode, 12V V(Z), 5.39%, 0.37W, Silicon, Unidirectional, GREEN, PLASTIC PACKAGE-2
BZT52C12-7-F DIODES

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Zener Diode, 12V V(Z), 5.39%, 0.37W, Silicon, Unidirectional, GREEN, PLASTIC PACKAGE-2
MMSZ5242B-7-F DIODES

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500mW SURFACE MOUNT ZENER DIODE

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