5秒后页面跳转
BZT52B62 PDF预览

BZT52B62

更新时间: 2024-01-06 03:08:37
品牌 Logo 应用领域
威世 - VISHAY 稳压二极管齐纳二极管
页数 文件大小 规格书
8页 121K
描述
Small Signal Zener Diodes

BZT52B62 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.64
二极管类型:ZENER DIODE峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BZT52B62 数据手册

 浏览型号BZT52B62的Datasheet PDF文件第2页浏览型号BZT52B62的Datasheet PDF文件第3页浏览型号BZT52B62的Datasheet PDF文件第4页浏览型号BZT52B62的Datasheet PDF文件第5页浏览型号BZT52B62的Datasheet PDF文件第6页浏览型号BZT52B62的Datasheet PDF文件第7页 
BZT52-Series  
Vishay Semiconductors  
www.vishay.com  
Small Signal Zener Diodes  
FEATURES  
• Silicon planar Zener diodes  
• The Zener voltages are graded according to the  
international E24 standard  
• AEC-Q101 qualified  
• ESD capability according to AEC-Q101:  
Human body model > 8 kV  
Machine model > 800 V  
• Base P/N-E3 - RoHS-compliant, commercial grade  
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified  
PRIMARY CHARACTERISTICS  
PARAMETER  
VZ range nom.  
Test current IZT  
VZ specification  
Int. construction  
VALUE  
2.4 to 75  
2.5; 5  
UNIT  
V
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
mA  
Pulse current  
Single  
ORDERING INFORMATION  
DEVICE NAME  
ORDERING CODE  
TAPED UNITS PER REEL  
MINIMUM ORDER QUANTITY  
BZT52C2V4-E3-08 to BZT52C75-E3-08  
BZT52B2V4-E3-08 to BZT52B75-E3-08  
BZT52C2V4-HE3-08 to BZT52C75-HE3-08  
BZT52B2V4-HE3-08 to BZT52B75-HE3-08  
BZT52C2V4-E3-18 to BZT52C75-E3-18  
BZT52B2V4-E3-18 to BZT52B75-E3-18  
BZT52C2V4-HE3-18 to BZT52C75-HE3-18  
BZT52B2V4-HE3-18 to BZT52B75-HE3-18  
3000 (8 mm tape on 7" reel)  
15 000/box  
BZT52-series  
10 000 (8 mm tape on 13" reel)  
10 000/box  
PACKAGE  
MOLDING COMPOUND  
WEIGHT  
MOISTURE SENSITIVITY  
LEVEL  
PACKAGE NAME  
SOLDERING CONDITIONS  
FLAMMABILITY RATING  
MSL level 1  
(according J-STD-020)  
SOD-123  
10.3 mg  
UL 94 V-0  
260 °C/10 s at terminals  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Diode on ceramic substrate 0.7 mm; 5 mm2  
pad areas  
Diode on ceramic substrate 0.7 mm; 2.5 mm2  
pad areas  
Ptot  
500  
mW  
Power dissipation  
Ptot  
410  
mW  
Zener current  
See table “Electrical Characteristics “  
Valid provided that electrodes are kept at  
ambient temperature  
Thermal resistance junction to ambient air  
RthJA  
300  
K/W  
Tj  
Junction temperature  
150  
°C  
°C  
°C  
Tstg  
Top  
Storage temperature range  
Operating temperature range  
- 65 to + 150  
- 55 to + 150  
Rev. 1.8, 26-Feb-13  
Document Number: 85760  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与BZT52B62相关器件

型号 品牌 获取价格 描述 数据表
BZT52-B62 PANJIT

获取价格

SURFACE MOUNT SILICON ZENER DIODES
BZT52-B62 NEXPERIA

获取价格

Single Zener diodes in a SOD123 packageProduction
BZT52-B62-AU PANJIT

获取价格

SOD-123
BZT52-B62D3 VISHAY

获取价格

DIODE 62 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, SO-2, Voltag
BZT52-B62-D3 VISHAY

获取价格

Zener Diode, 62V V(Z), 2%, 0.41W, Silicon, Unidirectional, PLASTIC, SO-2
BZT52-B62D4 VISHAY

获取价格

DIODE 62 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, SO-2, Voltag
BZT52-B62-D4 VISHAY

获取价格

Zener Diode, 62V V(Z), 2%, 0.41W, Silicon, Unidirectional, PLASTIC, SO-2
BZT52B62-D4 VISHAY

获取价格

DIODE 62 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC PACKAGE-2, Vo
BZT52B62-E3-08 VISHAY

获取价格

Zener Diode, 62V V(Z), 1.94%, 0.5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC PACKA
BZT52B62-E3-18 VISHAY

获取价格

Zener Diode, 62V V(Z), 1.94%, 0.5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC PACKA