BZT52B3V9

更新时间： 2024-12-01 12:28:11

品牌	Logo	应用领域
威世 - VISHAY		二极管齐纳二极管
页数	文件大小	规格书
8页	121K
描述
Small Signal Zener Diodes

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

BZT52B3V9 数据手册

BZT52-Series

Vishay Semiconductors

www.vishay.com

Small Signal Zener Diodes

FEATURES

• Silicon planar Zener diodes

• The Zener voltages are graded according to the

international E24 standard

• AEC-Q101 qualified

• ESD capability according to AEC-Q101:

Human body model > 8 kV

Machine model > 800 V

• Base P/N-E3 - RoHS-compliant, commercial grade

• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified

PRIMARY CHARACTERISTICS

PARAMETER

V_Zrange nom.

Test current I_ZT

V_Zspecification

Int. construction

VALUE

2.4 to 75

2.5; 5

UNIT

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

Pulse current

Single

ORDERING INFORMATION

DEVICE NAME

ORDERING CODE

TAPED UNITS PER REEL

MINIMUM ORDER QUANTITY

BZT52C2V4-E3-08 to BZT52C75-E3-08

BZT52B2V4-E3-08 to BZT52B75-E3-08

BZT52C2V4-HE3-08 to BZT52C75-HE3-08

BZT52B2V4-HE3-08 to BZT52B75-HE3-08

BZT52C2V4-E3-18 to BZT52C75-E3-18

BZT52B2V4-E3-18 to BZT52B75-E3-18

BZT52C2V4-HE3-18 to BZT52C75-HE3-18

BZT52B2V4-HE3-18 to BZT52B75-HE3-18

3000 (8 mm tape on 7" reel)

15 000/box

BZT52-series

10 000 (8 mm tape on 13" reel)

10 000/box

PACKAGE

MOLDING COMPOUND

WEIGHT

MOISTURE SENSITIVITY

LEVEL

PACKAGE NAME

SOLDERING CONDITIONS

FLAMMABILITY RATING

MSL level 1

(according J-STD-020)

SOD-123

10.3 mg

UL 94 V-0

260 °C/10 s at terminals

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Diode on ceramic substrate 0.7 mm; 5 mm²

pad areas

Diode on ceramic substrate 0.7 mm; 2.5 mm²

pad areas

P_tot

500

Power dissipation

P_tot

410

Zener current

See table “Electrical Characteristics “

Valid provided that electrodes are kept at

ambient temperature

Thermal resistance junction to ambient air

R_thJA

300

K/W

T_j

Junction temperature

150

°C

T_stg

T_op

Storage temperature range

Operating temperature range

- 65 to + 150

- 55 to + 150

Rev. 1.8, 26-Feb-13

Document Number: 85760

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

中文翻译

下载PDF

BZT52B3V9 替代型号

型号	品牌	替代类型	描述	数据表
BZT52B3V9-TP	MCC	功能相似	Zener Diode, 3.9V V(Z), 2%, 0.41W,

与BZT52B3V9相关器件

型号	品牌	获取价格	描述	数据表
BZT52-B3V9	PANJIT	获取价格	SURFACE MOUNT SILICON ZENER DIODES
BZT52-B3V9	NEXPERIA	获取价格	Single Zener diodes in a SOD123 packageProduction
BZT52-B3V9-AU	PANJIT	获取价格	SOD-123
BZT52B3V9BS	MCC	获取价格	400 mW Zener Diode 3.0 to 51 Volts
BZT52B3V9BS	YANGJIE	获取价格	SOD-323
BZT52-B3V9D3	VISHAY	获取价格	DIODE 3.9 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, SO-2, Volta
BZT52-B3V9-D3	VISHAY	获取价格	Zener Diode, 3.9V V(Z), 2%, 0.41W, Silicon, Unidirectional, PLASTIC, SO-2
BZT52-B3V9D4	VISHAY	获取价格	DIODE 3.9 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, SO-2, Volta
BZT52-B3V9-D4	VISHAY	获取价格	Zener Diode, 3.9V V(Z), 2%, 0.41W, Silicon, Unidirectional, PLASTIC, SO-2
BZT52B3V9-E3-08	VISHAY	获取价格	Zener Diode, 3.9V V(Z), 2.05%, 0.5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC PACK

与BZT52B3V9相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

BZT52B3V9

BZT52B3V9 数据手册

BZT52B3V9 替代型号

与BZT52B3V9相关器件

与BZT52B3V9相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BZT52B3V9

BZT52B3V9 数据手册

BZT52B3V9 替代型号

与BZT52B3V9相关器件

与BZT52B3V9相关文章

您还可以找

您在本页遇到什么问题？