BZT03D9V1TAP

更新时间： 2024-02-09 02:32:47

品牌	Logo	应用领域
威世 - VISHAY		瞬态抑制器二极管齐纳二极管测试
页数	文件大小	规格书
5页	111K
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BZT03D9V1TAP 数据手册

BZT03-Series

Vishay Semiconductors

Zener Diodes with Surge Current Specification

Features

• Glass passivated junction

• Hermetically sealed package

• Clamping time in picoseconds

• Compliant to RoHS directive 2002/95/EC

and in accordance to WEEE 2002/96/EC

•

Halogen-free according to IEC 61249-2-21

definition

949539

Applications

• Medium power voltage regulators and medium

power transient suppression circuits

Mechanical Data

Case: SOD-57

Weight: approx. 369 mg

Packaging codes/options:

TAP / 5 k ammopack (52 mm tape) / 25 k/box

TR / 5 k 10" reel

Absolute Maximum Ratings

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Symbol

P_V

Value

3.25

1.3

Unit

l = 10 mm, T_L= 25 °C

T_amb= 25 °C

Power dissipation

P_V

Repetitive peak reverse power

dissipation

P_ZRM

Non repetitive peak surge power

dissipation

t_p= 100 μs, T_j= 25 °C

P_ZSM

600

T_j

Junction temperature

175

°C

T_stg

Storage temperature range

- 65 to + 175

Thermal Characteristics

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Symbol

R_thJA

Value

Unit

l = 10 mm, T_L= constant

K/W

Junction ambient

R_thJA

On PC board with spacing 25 mm

100

Electrical Characteristics

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Symbol

V_F

Min.

Typ.

Max.

1.2

Unit

I_F= 0.5 A

Forward voltage

Document Number 85599

Rev. 1.5, 26-Aug-10

www.vishay.com

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

12 3 4 5

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