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BZT03D180-TR PDF预览

BZT03D180-TR

更新时间: 2024-01-09 16:05:01
品牌 Logo 应用领域
威世 - VISHAY 二极管齐纳二极管测试
页数 文件大小 规格书
5页 263K
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BZT03D180-TR 数据手册

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BZT03..Series  
Vishay Semiconductors  
VISHAY  
Silicon Zener-Diodes with Surge Current Specification  
Features  
• Glass passivated junction  
• Hermetically sealed package  
• Clamping time in picoseconds  
Applications  
Medium power voltage regulators and medium power  
transient suppression circuits  
Mechanical Data  
Case:SOD57  
949539  
Weight: 370 mg (max.500 mg)  
Packaging Codes/Options:  
TAP / 5 K Ammopack (52 mm tape) / 25 K/box  
TR / 5 K 10" reel  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
Parameter  
amb  
Test condition  
Symbol  
Value  
3.25  
Unit  
W
Power dissipation  
l = 10 mm, T = 25 °C  
P
P
L
V
V
T
= 25 °C  
1.3  
10  
W
W
amb  
Repetitive peak reverse power  
dissipation  
P
ZRM  
Non repetitive peak surge power t = 100 s, T = 25 °C  
P
600  
W
p
j
ZSM  
dissipation  
Junction temperature  
T
175  
°C  
°C  
j
Storage temperature range  
T
- 65 to + 175  
stg  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Junction ambient  
Test condition  
Symbol  
Value  
46  
Unit  
l = 10 mm, T = constant  
R
R
K/W  
K/W  
L
thJA  
thJA  
on PC board with spacing 25 mm  
100  
Electrical Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Min  
Typ.  
Max  
1.2  
Unit  
V
Forward voltage  
I = 0.5 A  
V
F
F
Document Number 85599  
Rev. 4, 10-Sep-03  
www.vishay.com  
1

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