BZT03D160

更新时间： 2024-02-29 23:19:28

品牌	Logo	应用领域
威世 - VISHAY		二极管测试光电二极管
页数	文件大小	规格书
5页	70K
描述
Silicon Z-Diodes and Transient Voltage Suppressors

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BZT03D160 数据手册

BZT03D...

Vishay Telefunken

Silicon Z–Diodes and Transient Voltage Suppressors

Features

Glass passivated junction

Hermetically sealed package

Clamping time in picoseconds

Applications

94 9539

Medium power voltage regulators and

medium power transient suppression circuits

Absolute Maximum Ratings

T = 25 C

Parameter

Power dissipation

Test Conditions

l=10mm, T =25 C

Type Symbol

Value

3.25

1.3

600

Unit

T =25 C

amb

Repetitive peak reverse power dissipation

Non repetitive peak surge power dissipation t =100 s, T =25 C

Junction temperature

ZRM

ZSM

175

Storage temperature range

stg

–65...+175

Maximum Thermal Resistance

T = 25 C

Parameter

Junction ambient l=10mm, T =constant

Test Conditions

Symbol

Value

100

Unit

K/W

thJA

on PC board with spacing 25mm

Electrical Characteristics

T = 25 C

Parameter

Forward voltage

Test Conditions

I =0.5A

Type

Symbol Min

Typ Max Unit

1.2

Document Number 85600

Rev. 2, 01-Apr-99

www.vishay.de • FaxBack +1-408-970-5600

1 (5)

12 3 4 5

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