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BZT03D120-TR PDF预览

BZT03D120-TR

更新时间: 2024-09-23 13:06:03
品牌 Logo 应用领域
威世 - VISHAY 瞬态抑制器二极管测试
页数 文件大小 规格书
5页 70K
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BZT03D120-TR 数据手册

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BZT03D...  
Vishay Telefunken  
Silicon Z–Diodes and Transient Voltage Suppressors  
Features  
Glass passivated junction  
Hermetically sealed package  
Clamping time in picoseconds  
Applications  
94 9539  
Medium power voltage regulators and  
medium power transient suppression circuits  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Power dissipation  
Test Conditions  
l=10mm, T =25 C  
Type Symbol  
Value  
3.25  
1.3  
10  
600  
Unit  
W
W
W
W
C
P
V
P
V
L
T =25 C  
amb  
Repetitive peak reverse power dissipation  
Non repetitive peak surge power dissipation t =100 s, T =25 C  
Junction temperature  
P
P
ZRM  
ZSM  
p
j
T
175  
j
Storage temperature range  
T
stg  
–65...+175  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient l=10mm, T =constant  
Test Conditions  
Symbol  
Value  
46  
100  
Unit  
K/W  
K/W  
R
thJA  
R
thJA  
L
on PC board with spacing 25mm  
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =0.5A  
Type  
Symbol Min  
Typ Max Unit  
1.2  
V
F
V
F
Document Number 85600  
Rev. 2, 01-Apr-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (5)  

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