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BZM55C4V7 PDF预览

BZM55C4V7

更新时间: 2024-11-08 12:21:23
品牌 Logo 应用领域
鲁光 - LGE 二极管齐纳二极管测试
页数 文件大小 规格书
4页 869K
描述
Zener Diodes

BZM55C4V7 技术参数

Case Style:MICRO MELFPd(W):0.5
VZ(Min):4.4VZ(Nom):4.7
VZ(Max):5.0IZT(mA):5.0
IR(uA):10VR(V):1
class:Diodes

BZM55C4V7 数据手册

 浏览型号BZM55C4V7的Datasheet PDF文件第2页浏览型号BZM55C4V7的Datasheet PDF文件第3页浏览型号BZM55C4V7的Datasheet PDF文件第4页 
BZM55C Series  
Zener Diodes  
MINI-MELF  
Cathode indification  
Features  
—
Small surface mounting type  
High reliability  
—
±
0.4 0.1  
3.4 +0.3  
Applications  
-0.1  
Voltage stabilization  
—
Dimensions in millimeters  
Construction  
Silicon epitaxial planar  
—
Absolute Maximum Ratings  
Tj=25℃  
Parameter  
Power dissipation  
Z-current  
Junction temperature  
Storage temperature range  
Test Conditions  
thJA300K/W  
Type  
Symbol  
Value  
500  
PV/VZ  
175  
-65~+175  
Unit  
mW  
mA  
R
PV  
IZ  
Tj  
Tstg  
Maximum Thermal Resistance  
Tj=25℃  
Parameter  
Junction ambient  
Test Conditions  
on PC board 50mm×50mm×1.6mm  
Symbol  
RthJA  
Value  
500  
Unit  
K/W  
Electrical Characteristics  
Tj=25℃  
Parameter  
Forward voltage  
Test Conditions  
IF=200mA  
Type  
Symbol Min  
VF  
Typ Max Unit  
1.5  
V
http://www.luguang.cn  
mail:lge@luguang.cn  

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