Datasheet > BZG47

BZG47

更新时间： 2024-09-22 09:03:59

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
4页	66K
描述
Silicon Z–Diodes

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中文翻译

获取价格

数据手册

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BZG47 数据手册

BZG47.. , BZG47..A

Vishay Telefunken

Silicon Z–Diodes

Features

Passivated junction

High reliability

Voltage range 3.3 V to 100 V

Fits onto 5 mm SMD footpads

Wave and reflow solderable

Znom

±10% and ±5% tolerance

15 811

Applications

Voltage stabilization

Absolute Maximum Ratings

T = 25 C

Parameter

Power dissipation

Non repetitive peak surge

power dissipation

Test Conditions

<100K/W, T =25 C

t =100 s sq.pulse,

Type

Symbol

Value

1.25

Unit

thJA

amb

ZSM

T =25 C prior to surge

Junction temperature

Storage temperature range

stg

150

–65...+150

Maximum Thermal Resistance

T = 25 C

Parameter

Junction lead

Test Conditions

Symbol

Value

150

125

100

Unit

K/W

thJL

thJA

Junction ambient mounted on epoxy–glass hard tissue, Fig. 1a

mounted on epoxy–glass hard tissue, Fig. 1b

mounted on Al–oxid–ceramic (Al O ), Fig. 1b

Electrical Characteristics

T = 25 C

Parameter

Forward voltage

Test Conditions

I =0.2A

Type

Symbol Min

Typ Max Unit

1.2

Document Number 85623

Rev. 5, 06-Aug-99

www.vishay.de • FaxBack +1-408-970-5600

1 (4)

12 3 4

中文翻译

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