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BZG04-220TR3 PDF预览

BZG04-220TR3

更新时间: 2024-11-24 14:29:27
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管电视
页数 文件大小 规格书
7页 204K
描述
DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, LEAD FREE, PLASTIC PACKAGE-2, Transient Suppressor

BZG04-220TR3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.77
Is Samacsys:N其他特性:HIGH RELIABILITY
最小击穿电压:251 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:300 W元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:3 W
认证状态:Not Qualified最大重复峰值反向电压:220 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

BZG04-220TR3 数据手册

 浏览型号BZG04-220TR3的Datasheet PDF文件第2页浏览型号BZG04-220TR3的Datasheet PDF文件第3页浏览型号BZG04-220TR3的Datasheet PDF文件第4页浏览型号BZG04-220TR3的Datasheet PDF文件第5页浏览型号BZG04-220TR3的Datasheet PDF文件第6页浏览型号BZG04-220TR3的Datasheet PDF文件第7页 
BZG04-Series  
Vishay Semiconductors  
Zener Diodes with Surge Current Specification  
Features  
• Glass passivated junction  
• High reliability  
e3  
• Stand-off Voltage range 8.2 V to 220 V  
• Excellent clamping cabability  
• Fast response time (typ. 1 ps from 0 to V  
• Lead (Pb)-free component  
)
Zmin  
15811  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Applications  
Protection from high voltage, high energy transients  
Mechanical Data  
Case: DO-214AC  
Weight: approx. 77 mg  
Packaging Codes/Options:  
TR / 1.5 k 7 " reel  
TR3 / 6 k 13 " reel 6 k/box  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Power dissipation  
Test condition  
Symbol  
Pdiss  
Value  
3
Unit  
W
RthJA < 25 K/W, Tamb = 100 °C  
R
thJA < 100 K/W, Tamb = 50 °C  
Pdiss  
1.25  
300  
W
W
Non repetitive peak surge power tp = 10/1000 µs sq.pulse,  
PZSM  
dissipation  
Tj = 25 °C prior to surge  
Peak forward surge current  
Junction temperature  
10 ms single half sine wave  
IFSM  
Tj  
50  
150  
A
°C  
°C  
Storage temperature range  
Tstg  
- 65 to + 150  
Thermal Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
RthJL  
Value  
25  
Unit  
Junction lead  
K/W  
K/W  
Junction ambient  
mounted on epoxy-glass hard  
tissue, Fig. 1a  
RthJA  
RthJA  
RthJA  
150  
125  
100  
mounted on epoxy-glass hard  
tissue, Fig. 1b  
K/W  
K/W  
mounted on Al-oxid-ceramic  
(Al2O3), Fig. 1b  
Electrical Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
IF = 0.5 A  
Symbol  
VF  
Min  
Typ.  
Max  
1.2  
Unit  
V
Forward voltage  
Document Number 85594  
Rev. 2.2, 15-Sep-05  
www.vishay.com  
1

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