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BZG04-16 PDF预览

BZG04-16

更新时间: 2024-11-20 06:44:55
品牌 Logo 应用领域
威世 - VISHAY 二极管齐纳二极管
页数 文件大小 规格书
6页 184K
描述
Zener Diodes with Surge Current Specification

BZG04-16 数据手册

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BZG04-Series  
Vishay Semiconductors  
Zener Diodes with Surge Current Specification  
Features  
• Glass passivated junction  
• High reliability  
e3  
• Stand-off Voltage range 8.2 V to 220 V  
• Excellent clamping cabability  
• Fast response time (typ. 1 ps from 0 to V  
• Lead (Pb)-free component  
)
Zmin  
15811  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Applications  
Protection from high voltage, high energy transients  
Mechanical Data  
Case: DO-214AC  
Weight: approx. 77 mg  
Packaging Codes/Options:  
TR / 1.5 k 7 " reel  
TR3 / 6 k 13 " reel 6 k/box  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Power dissipation  
Test condition  
Symbol  
Pdiss  
Value  
3
Unit  
W
RthJA < 25 K/W, Tamb = 100 °C  
R
thJA < 100 K/W, Tamb = 50 °C  
Pdiss  
1.25  
300  
W
W
Non repetitive peak surge power tp = 10/1000 µs sq.pulse,  
PZSM  
dissipation  
Tj = 25 °C prior to surge  
Peak forward surge current  
Junction temperature  
10 ms single half sine wave  
IFSM  
Tj  
50  
150  
A
°C  
°C  
Storage temperature range  
Tstg  
- 65 to + 150  
Thermal Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
RthJL  
Value  
25  
Unit  
Junction lead  
K/W  
K/W  
Junction ambient  
mounted on epoxy-glass hard  
tissue, Fig. 1a  
RthJA  
RthJA  
RthJA  
150  
125  
100  
mounted on epoxy-glass hard  
tissue, Fig. 1b  
K/W  
K/W  
mounted on Al-oxid-ceramic  
(Al2O3), Fig. 1b  
Electrical Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
IF = 0.5 A  
Symbol  
VF  
Min  
Typ.  
Max  
1.2  
Unit  
V
Forward voltage  
Document Number 85594  
Rev. 2.2, 15-Sep-05  
www.vishay.com  
1

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