Datasheet > BZG04-110-M

BZG04-110-M

更新时间： 2024-11-02 02:47:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	94K
描述
Zener Diodes with Surge Current Specification

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中文翻译

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数据手册

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BZG04-110-M 数据手册

BZG04-M-Series

Vishay Semiconductors

www.vishay.com

Zener Diodes with Surge Current Specification

FEATURES

• High reliability

• Stand-off voltage range 8.2 V to 220 V

• Excellent clamping capability

• Fast response time

• AEC-Q101 qualified available

• Base P/N-M3 - halogen-free, RoHS-compliant, and

commercial grade

SMA (DO-214AC)

• Base P/NHM3 - halogen-free, RoHS-compliant, and

AEC-Q101 qualified

PRIMARY CHARACTERISTICS

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PARAMETER

VALUE

UNIT

V_Zrange nom.

Test current I_ZT

V_BR

10 to 270

2 to 50

APPLICATIONS

9.4 to 251

8.2 to 220

300

• Protection from high voltage, high energy transients

V_WM



P_PPM

°C

T_Jmax.

150

V_Zspecification

Circuit configuration

Polarity

Pulse current

Single

Uni-directional

ORDERING INFORMATION

DEVICE NAME

ORDERING CODE

TAPED UNITS PER REEL MINIMUM ORDER QUANTITY

BZG04-M-series

BZG04xxx-M3-08

BZG04xxx-M3-18

BZG04xxx-HM3-08

BZG04xxx-HM3-18

1500 per 7" reel

6000 per 13" reel

1500 per 7" reel

6000 per 13" reel

6000/box

PACKAGE

MOLDING COMPOUND

FLAMMABILITY RATING

MOISTURE SENSITIVITY

LEVEL

PACKAGE NAME

WEIGHT

SOLDERING CONDITIONS

MSL level 1

(according J-STD-020)

SMA (DO-214AC)

73 mg

UL 94 V-0

260 °C/10 s at terminals

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

R_thJA< 25 K/W, T_amb= 100 °C

P_tot

3000

1250

Power dissipation

R_thJA< 100 K/W, T_amb= 50 °C

t_p= 10/1000 μs exp. pulse,

T_j= 25 °C prior to surge

Non repetitive peak surge power dissipation

P_ZSM

300

Peak forward surge current

Junction to lead

10 ms single half sine wave

I_FSM

R_thJL

R_thJA

T_j

K/W

°C

Mounted on epoxy-glass hard tissue, fig. 1a

Mounted on epoxy-glass hard tissue, fig. 1b

Mounted on Al-oxide-ceramic (Al₂O₃), fig. 1b

150

Junction to ambient air

125

100

Junction temperature

150

Storage temperature range

Forward voltage (max.)

T_stg

-65 to +150

1.2

°C

I_F= 0.5 A

V_F

Rev. 1.0, 13-Oct-17

Document Number: 86139

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与BZG04-110-M相关器件

型号	品牌	获取价格	描述	数据表
BZG04-110-M3-08	VISHAY	获取价格	DIODE ZENER 110V 50A DO214AC
BZG04-110-M3-18	VISHAY	获取价格	DIODE ZENER 110V 50A DO214AC
BZG04-110T/R	NXP	获取价格	DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC PACKAGE-2, Transient Su
BZG04110TR	TEMIC	获取价格	Trans Voltage Suppressor Diode, 300W, 110V V(RWM), Unidirectional, 1 Element, Silicon,
BZG04110TR	VISHAY	获取价格	300W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214, PLASTIC, DO-214, 2 PIN
BZG04-110TR	VISHAY	获取价格	DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, LEAD FREE, PLASTIC PACKAGE-2, T
BZG04-110-TR	VISHAY	获取价格	暂无描述
BZG04110TR3	TEMIC	获取价格	Trans Voltage Suppressor Diode, 300W, 110V V(RWM), Unidirectional, 1 Element, Silicon,
BZG04110TR3	VISHAY	获取价格	300W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214, PLASTIC, DO-214, 2 PIN
BZG04-110TR3	VISHAY	获取价格	DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, LEAD FREE, PLASTIC PACKAGE-2, T

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