BZG03C30

更新时间： 2024-10-31 23:13:35

品牌	Logo	应用领域
威世 - VISHAY		二极管齐纳二极管测试
页数	文件大小	规格书
5页	74K
描述
Silicon Z-Diodes

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中文翻译

获取价格

数据手册

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BZG03C30 数据手册

BZG03C...

Vishay Telefunken

Silicon Z–Diodes

Features

Glass passivated junction

High reliability

Voltage range 10V to 270V

Fits onto 5 mm SMD footpads

Wave and reflow solderable

15 811

Applications

Voltage stabilization

Absolute Maximum Ratings

T = 25 C

Parameter

Power dissipation

Test Conditions

<25K/W, T =100 C

Type Symbol

Value

1.25

600

Unit

thJA

amb

<100K/W, T =50 C

thJA

amb

Non repetitive peak surge power

dissipation

t =100 s sq.pulse, T =25 C

ZSM

prior to surge

Junction temperature

Storage temperature range

stg

175

–65...+150

Maximum Thermal Resistance

T = 25 C

Parameter

Junction lead

Test Conditions

Symbol

Value

150

125

100

Unit

K/W

thJL

thJA

Junction ambient mounted on epoxy–glass hard tissue, Fig. 1a

mounted on epoxy–glass hard tissue, Fig. 1b

mounted on Al–oxid–ceramic (Al O ), Fig. 1b

Electrical Characteristics

T = 25 C

Parameter

Forward voltage

Test Conditions

I =0.5A

Type

Symbol Min

Typ Max Unit

1.2

www.vishay.de • FaxBack +1-408-970-5600

Document Number 85593

Rev. 5, 01-Apr-99

1 (5)

12 3 4 5

中文翻译

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