Datasheet > BZD27C3V9P

BZD27C3V9P

更新时间： 2024-11-09 18:04:03

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
6页	501K
描述
Package / Case : SOD-123F(L)-1;Mounting Style : SMT/SMD;Zener Voltage Vz (V) : 3.9 V;Zener Voltage

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中文翻译

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BZD27C3V9P 数据手册

BZD27CxxP

SERIES

SILICON PLANAR ZENER DIODE

FEATURES

Silicon planar zener diodes.

Low profile surface-mount package.

* Zener and surge current specification

Low leakage current

Excellent stability

SOD-123F(L)-1

* High temperature soldering guaranteed:

/10 seconds,

265

Cathode Band

Top View

at terminals

* Halogen-free

1.8 0.1

1.0 0.2

MECHANICAL DATA

2.8 0.1

Case: JEDEC SOD-123F(L)-1 molded plastic

0.05 0.30

0.98 0.1

( cathode ) except

Polarity: Color band denotes positive end

for bidirectional

0.60 0.25

Weight: 0.006 ounces, 0.02 grams

* Mounting position: Any

3.7 0.2

UNIT:mm

Ratings at 25 ambient temperature unless otherwise specified

ABSOLUTE MAXIMUM RATINGS AND CHARACTERISTICS

VALUE

SYMBOL

UNITS

RATINGS

Non-repetitive peak pulse power dissipation

with a 10/1000μs waveform (NOTE 1)

150

P_PPM

Watts

Power dissipation at T_A=25 (NOTE 2)

Reverse current at stand-off voltage @ V_WM

Maximum instantaneous forward voltage at 0.2A

Thermal resistance junction to ambient

Operating temperature junction range

0.8

SEE TABLE 1

1.2

P_tot

I_R

Watts

μ A

V_F

Volts

K/W

180

R_θJA

T_J

- 55 to +175

Storage temperature range

T_STG

2020-11/08

REV:F

NOTES:(1)T_J=25 prior to surge.

(2)Mounted on epoxy-glass PCB with 3×3 mm Cu pads( 40μm thick)

(3)Non-repetitive peak reverse current in accordance with "IEC 60-1,Section 8" (10/1000μs pulse)

12 3 4 5 6

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