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BZD27C24P-M18 PDF预览

BZD27C24P-M18

更新时间: 2024-11-07 04:11:11
品牌 Logo 应用领域
威世 - VISHAY 稳压二极管
页数 文件大小 规格书
7页 85K
描述
DIODE 24.2 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB, HALOGEN FREE AND ROHS COMPLIANT, SMF, 2 PIN, Voltage Regulator Diode

BZD27C24P-M18 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-219AB
包装说明:HALOGEN FREE AND ROHS COMPLIANT, SMF, 2 PIN针数:2
Reach Compliance Code:unknown风险等级:5.62
Base Number Matches:1

BZD27C24P-M18 数据手册

 浏览型号BZD27C24P-M18的Datasheet PDF文件第2页浏览型号BZD27C24P-M18的Datasheet PDF文件第3页浏览型号BZD27C24P-M18的Datasheet PDF文件第4页浏览型号BZD27C24P-M18的Datasheet PDF文件第5页浏览型号BZD27C24P-M18的Datasheet PDF文件第6页浏览型号BZD27C24P-M18的Datasheet PDF文件第7页 
BZD27C3V6P-M to BZD27C200P-M  
Vishay Semiconductors  
Zener Diodes with Surge Current Specification  
Features  
• Sillicon planar zener diodes  
• Low profile surface-mount package  
• Zener and surge current specification  
• Low leakage current  
• Excellent stability  
• High temperature soldering: 260 °C/10 s  
at terminals  
17249  
• AEC-Q101 qualified  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
Halogen-free according to IEC 61249-2-21  
definition  
Mechanical Data  
Case: DO-219AB (SMF)  
Weight: approx. 15 mg  
Packaging codes/options:  
18/10 k per 13 " reel (8 mm tape), 10 k/box  
08/3 k per 7 " reel (8 mm tape), 15 k/box  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
TL = 80 °C  
Symbol  
Ptot  
Value  
2.3  
Unit  
W
Power dissipation  
0.8 1)  
300  
TA = 25 °C  
Ptot  
W
100 μs square pulse 2)  
10/1000 μs waveform (BZD27-C7V5P-M to BZD27-C100P-M) 2)  
10/1000 μs waveform (BZD27-C110P-M to BZD27-C200P-M) 2)  
PZSM  
PRSM  
PRSM  
W
W
W
Non-repetitive peak pulse power  
dissipation  
150  
100  
Note:  
1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (40 µm thick)  
2) TJ = 25 °C prior to surge  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
Unit  
K/W  
Thermal resistance junction to ambient air 1)  
Thermal resistance junction to lead  
180  
30  
RthJL  
Tj  
K/W  
°C  
Maximum junction temperature  
Storage temperature range  
Note:  
150  
TS  
- 55 to + 150  
°C  
1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (40 µm thick)  
Document Number 83307  
Rev. 1.0, 01-Apr-10  
www.vishay.com  
1
For technical support, please contact: DiodesSSP@vishay.com  

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