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BZD27C160PV PDF预览

BZD27C160PV

更新时间: 2024-11-09 18:04:03
品牌 Logo 应用领域
RECTRON /
页数 文件大小 规格书
6页 497K
描述
Package / Case : SOD-123F(L)-1;Mounting Style : SMT/SMD;Zener Voltage Vz (V) : 162 V;Zener Voltage

BZD27C160PV 数据手册

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BZD27CxxPV  
SERIES  
SILICON PLANAR ZENER DIODE  
FEATURES  
*
*
Silicon planar zener diodes.  
Low profile surface-mount package.  
* Zener and surge current specification  
Low leakage current  
Excellent stability  
*
SOD-123F(L)-1  
*
* High temperature soldering guaranteed:  
/10 seconds,  
265  
Cathode Band  
Top View  
at terminals  
*
P/N suffix V means AEC-Q101 qualified, eg:BZD27C3V6PV  
* Halogen-free  
1.8 0.1  
1.0 0.2  
MECHANICAL DATA  
2.8 0.1  
Case: JEDEC SOD-123F(L)-1 molded plastic  
*
*
0.05 0.30  
0.98 0.1  
( cathode ) except  
Polarity: Color band denotes positive end  
for bidirectional  
0.60 0.25  
Weight: 0.006 ounces, 0.02 grams  
*
* Mounting position: Any  
3.7 0.2  
UNIT:mm  
Ratings at 25 ambient temperature unless otherwise specified  
ABSOLUTE MAXIMUM RATINGS AND CHARACTERISTICS  
VALUE  
SYMBOL  
UNITS  
RATINGS  
Non-repetitive peak pulse power dissipation  
with a 10/1000μs waveform (NOTE 1)  
150  
PPPM  
Watts  
Power dissipation at TA=25 (NOTE 2)  
Reverse current at stand-off voltage @ VWM  
Maximum instantaneous forward voltage at 0.2A  
Thermal resistance junction to ambient  
Operating temperature junction range  
0.8  
SEE TABLE 1  
1.2  
Ptot  
IR  
Watts  
μ A  
VF  
Volts  
K/W  
180  
RθJA  
TJ  
- 55 to +175  
- 55 to +175  
Storage temperature range  
TSTG  
NOTES:(1)TJ=25 prior to surge.  
2020-11/08  
REV:O  
(2)Mounted on epoxy-glass PCB with 3×3 mm Cu pads( 40μm thick)  
(3)Non-repetitive peak reverse current in accordance with "IEC 60-1,Section 8" (10/1000μs pulse)  

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