Datasheet > BZD17C11P

BZD17C11P

更新时间： 2024-11-12 02:59:07

品牌	Logo	应用领域
威世 - VISHAY		测试光电二极管
页数	文件大小	规格书
5页	85K
描述
Excellent stability

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中文翻译

获取价格

数据手册

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BZD17C11P 数据手册

BZD17C3V6P to BZD17C200P

Vishay Semiconductors

Zener Diodes

Features

• Sillicon planar zener diodes

• Low profile surface-mount package

• Low leakage current

• Excellent stability

• High temperature soldering: 260 °C/10 s

at terminals

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

17249

Packaging codes/options:

GS18/10K per 13" reel, (8 mm tape), 50K/box

GS08/3K per 7" reel, (8 mm tape), 30K/box

Mechanical Data

Case: JEDEC DO219AB (SMF ) plastic case

Weight: approx. 15 mg

Absolute Maximum Ratings

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

T_L= 80 °C

Symbol

P_tot

Value

2.3

Unit

Power dissipation

0.8 ¹⁾

T_A= 25 °C

P_tot

Non-repetitive peak pulse power

dissipation

100 µs square pulse ²⁾

P_ZSM

300

Notes:

¹⁾Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 µm thick)

²⁾T_j= 25 °C prior to surge

Thermal Characteristics

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Symbol

R_thJA

R_thJL

T_j

Value

180

Unit

K/W

°C

Thermal resistance junction to ambient air

Thermal resistance junction to lead

Maximum junction temperature

Storage temperature range

150

T_stg

- 55 to + 150

°C

Notes:

¹⁾Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 µm thick)

Electrical Characteristics

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Symbol

V_F

Min.

Typ.

Max.

1.2

Unit

I_F= 0.2 A

Forward voltage

Document Number 81821

Rev. 1.0, 09-Jun-09

www.vishay.com

For technical support, please contact: Diodes-SSP@vishay.com

12 3 4 5

中文翻译

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