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BYW55GP PDF预览

BYW55GP

更新时间: 2024-11-26 06:44:55
品牌 Logo 应用领域
海湾 - GULFSEMI 二极管
页数 文件大小 规格书
2页 135K
描述
SINTERED GLASS JUNCTION PLASTIC RECTIFIER VOLTAGE:600 TO 1000V CURRENT: 2.0A

BYW55GP 技术参数

生命周期:Contact Manufacturer包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.3
Is Samacsys:N应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJEDEC-95代码:DO-204AC
JESD-30 代码:O-PALF-W2最大非重复峰值正向电流:50 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:2 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM参考标准:MIL-19500
最大重复峰值反向电压:800 V最大反向电流:5 µA
最大反向恢复时间:3 µs表面贴装:NO
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

BYW55GP 数据手册

 浏览型号BYW55GP的Datasheet PDF文件第2页 
BYW54GP THRU BYW56GP  
SINTERED GLASS JUNCTION  
PLASTIC RECTIFIER  
VOLTAGE:600 TO 1000V  
CURRENT: 2.0A  
DO-15\DO-204AC  
FEATURE  
High temperature metallurgically bonded construction  
Sintered glass cavity free junction  
Capability of meeting environmental standard of  
MIL-S-19500  
High temperature soldering guaranteed  
350°C /10sec/0.375”lead length at 5 lbs tension  
Operate at Ta =45°C with no thermal run away  
Typical Ir<0.1µA  
MECHANICAL DATA  
Terminal: Plated axial leads solderable per  
MIL-STD 202E, method 208C  
Case: Molded with UL-94 Class V-0 recognized Flame  
Retardant Epoxy  
Polarity: color band denotes cathode  
Mounting position: any  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,  
for capacitive load, derate current by 20%)  
units  
SYMBOL  
BYW54GP  
BYW55GP  
BYW56GP  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
Maximum DC blocking Voltage  
reverse avalanche breakdown voltage  
Vrrm  
Vrms  
Vdc  
600  
420  
600  
800  
560  
800  
1000  
700  
1000  
V
V
V
650  
900  
2.0  
1100  
V
A
V
(BR)R (min)  
I
Maximum Average Forward Rectified  
Current 3/8”lead length at Ta =45°C  
R = 0.1 mA  
If(av)  
Peak Forward Surge Current 10ms single  
half sine-wave superimposed on rated load  
Maximum Instantaneous Forward Voltage  
Ifsm  
Vf  
50.0  
1.0  
A
V
I
F
=1.0A  
non-repetitive peak reverse avalanche energy  
(Note 1)  
Ta =25°C  
E
RSM  
20  
mJ  
µA  
Maximum DC Reverse Current  
at rated DC blocking voltage  
Typical Reverse Recovery Time  
Typical Junction Capacitance  
5.0  
100  
3.0  
Ir  
Ta=125°C  
(Note 2)  
(Note 3)  
Trr  
Cj  
µS  
PF  
°C  
/W  
°C  
50.0  
Typical Thermal Resistance  
(Note 4)  
R(ja)  
35.0  
Storage and Operating Junction Temperature  
Tstg, Tj  
-65 to +175  
Note: 1.L = 120 mH; Tj = Tj max prior to surge; inductive load switched off.  
2.Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A  
3.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc  
4. Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted  
Rev.A7 www.gulfsemi.com  

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