BYW52, BYW53, BYW54, BYW55, BYW56
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Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Controlled avalanche characteristics
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• High surge current loading
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
949539
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www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS
APPLICATIONS
• Rectification, general purpose
Models
Available
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
TAPED UNITS
MINIMUM ORDER QUANTITY
BYW56
BYW56-TR
5000 per 10" tape and reel
5000 per ammopack
25 000
25 000
BYW56
BYW56-TAP
PARTS TABLE
PART
TYPE DIFFERENTIATION
PACKAGE
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
BYW52
V
V
V
V
R = 200 V; IF(AV) = 2 A
R = 400 V; IF(AV) = 2 A
R = 600 V; IF(AV) = 2 A
R = 800 V; IF(AV) = 2 A
BYW53
BYW54
BYW55
BYW56
VR = 1000 V; IF(AV) = 2 A
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
See electrical characteristics
tp = 10 ms, half sine wave
PART
BYW52
BYW53
BYW54
BYW55
BYW56
SYMBOL
VALUE
UNIT
V
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
IFSM
200
400
600
800
1000
50
V
Reverse voltage = repetitive peak reverse
voltage
V
V
V
Peak forward surge current
Repetitive peak forward current
Average forward current
A
IFRM
12
A
= 180 °
IF(AV)
2
A
Pulse avalanche peak power
tp = 20 μs half sine wave, Tj = 175 °C
PR
1000
W
Pulse energy in avalanche mode, non
repetitive (inductive load switch off)
i2t-rating
l(BR)R = 1 A, Tj = 175 °C
ER
i2t
20
mJ
8
A2s
°C
Junction and storage temperature range
Tj = Tstg
-55 to +175
Rev. 1.9, 21-Feb-18
Document Number: 86049
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000