5秒后页面跳转
BYW52-TR PDF预览

BYW52-TR

更新时间: 2024-11-05 22:59:35
品牌 Logo 应用领域
威世 - VISHAY 局域网
页数 文件大小 规格书
4页 135K
描述
DIODE AVALANCHE 200V 2A SOD57

BYW52-TR 数据手册

 浏览型号BYW52-TR的Datasheet PDF文件第2页浏览型号BYW52-TR的Datasheet PDF文件第3页浏览型号BYW52-TR的Datasheet PDF文件第4页 
BYW52, BYW53, BYW54, BYW55, BYW56  
www.vishay.com  
Vishay Semiconductors  
Standard Avalanche Sinterglass Diode  
FEATURES  
• Controlled avalanche characteristics  
• Glass passivated junction  
• Hermetically sealed package  
• Low reverse current  
• High surge current loading  
• AEC-Q101 qualified  
• Material categorization:  
for definitions of compliance please see  
949539  
click logo to get started  
www.vishay.com/doc?99912  
DESIGN SUPPORT TOOLS  
APPLICATIONS  
• Rectification, general purpose  
Models  
Available  
MECHANICAL DATA  
Case: SOD-57  
Terminals: plated axial leads, solderable per MIL-STD-750,  
method 2026  
Polarity: color band denotes cathode end  
Mounting position: any  
Weight: approx. 369 mg  
ORDERING INFORMATION (Example)  
DEVICE NAME  
ORDERING CODE  
TAPED UNITS  
MINIMUM ORDER QUANTITY  
BYW56  
BYW56-TR  
5000 per 10" tape and reel  
5000 per ammopack  
25 000  
25 000  
BYW56  
BYW56-TAP  
PARTS TABLE  
PART  
TYPE DIFFERENTIATION  
PACKAGE  
SOD-57  
SOD-57  
SOD-57  
SOD-57  
SOD-57  
BYW52  
V
V
V
V
R = 200 V; IF(AV) = 2 A  
R = 400 V; IF(AV) = 2 A  
R = 600 V; IF(AV) = 2 A  
R = 800 V; IF(AV) = 2 A  
BYW53  
BYW54  
BYW55  
BYW56  
VR = 1000 V; IF(AV) = 2 A  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
See electrical characteristics  
tp = 10 ms, half sine wave  
PART  
BYW52  
BYW53  
BYW54  
BYW55  
BYW56  
SYMBOL  
VALUE  
UNIT  
V
VR = VRRM  
VR = VRRM  
VR = VRRM  
VR = VRRM  
VR = VRRM  
IFSM  
200  
400  
600  
800  
1000  
50  
V
Reverse voltage = repetitive peak reverse  
voltage  
V
V
V
Peak forward surge current  
Repetitive peak forward current  
Average forward current  
A
IFRM  
12  
A
= 180 °  
IF(AV)  
2
A
Pulse avalanche peak power  
tp = 20 μs half sine wave, Tj = 175 °C  
PR  
1000  
W
Pulse energy in avalanche mode, non  
repetitive (inductive load switch off)  
i2t-rating  
l(BR)R = 1 A, Tj = 175 °C  
ER  
i2t  
20  
mJ  
8
A2s  
°C  
Junction and storage temperature range  
Tj = Tstg  
-55 to +175  
Rev. 1.9, 21-Feb-18  
Document Number: 86049  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与BYW52-TR相关器件

型号 品牌 获取价格 描述 数据表
BYW53 VISHAY

获取价格

Silicon Mesa Rectifiers
BYW53P DIOTEC

获取价格

Standard Controlled Avalanche Rectifiers
BYW53TAP VISHAY

获取价格

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon
BYW53-TAP VISHAY

获取价格

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon, HALOGEN FREE AND
BYW53-TR VISHAY

获取价格

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon, HALOGEN FREE AND
BYW54 GULFSEMI

获取价格

SINTERED GLASS JUNCTION GENERAL AVALANCHE REC
BYW54 EIC

获取价格

AVALANCHE RECTIFIER DIODES
BYW54 NXP

获取价格

Controlled avalanche rectifiers
BYW54 VISHAY

获取价格

Silicon Mesa Rectifiers
BYW54/A52R ETC

获取价格

DIODE CONTROLLED AVALANCHE