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BYW52-TR PDF预览

BYW52-TR

更新时间: 2024-11-24 22:59:35
品牌 Logo 应用领域
威世 - VISHAY 局域网
页数 文件大小 规格书
4页 135K
描述
DIODE AVALANCHE 200V 2A SOD57

BYW52-TR 数据手册

 浏览型号BYW52-TR的Datasheet PDF文件第2页浏览型号BYW52-TR的Datasheet PDF文件第3页浏览型号BYW52-TR的Datasheet PDF文件第4页 
BYW52, BYW53, BYW54, BYW55, BYW56  
www.vishay.com  
Vishay Semiconductors  
Standard Avalanche Sinterglass Diode  
FEATURES  
• Controlled avalanche characteristics  
• Glass passivated junction  
• Hermetically sealed package  
• Low reverse current  
• High surge current loading  
• AEC-Q101 qualified  
• Material categorization:  
for definitions of compliance please see  
949539  
click logo to get started  
www.vishay.com/doc?99912  
DESIGN SUPPORT TOOLS  
APPLICATIONS  
• Rectification, general purpose  
Models  
Available  
MECHANICAL DATA  
Case: SOD-57  
Terminals: plated axial leads, solderable per MIL-STD-750,  
method 2026  
Polarity: color band denotes cathode end  
Mounting position: any  
Weight: approx. 369 mg  
ORDERING INFORMATION (Example)  
DEVICE NAME  
ORDERING CODE  
TAPED UNITS  
MINIMUM ORDER QUANTITY  
BYW56  
BYW56-TR  
5000 per 10" tape and reel  
5000 per ammopack  
25 000  
25 000  
BYW56  
BYW56-TAP  
PARTS TABLE  
PART  
TYPE DIFFERENTIATION  
PACKAGE  
SOD-57  
SOD-57  
SOD-57  
SOD-57  
SOD-57  
BYW52  
V
V
V
V
R = 200 V; IF(AV) = 2 A  
R = 400 V; IF(AV) = 2 A  
R = 600 V; IF(AV) = 2 A  
R = 800 V; IF(AV) = 2 A  
BYW53  
BYW54  
BYW55  
BYW56  
VR = 1000 V; IF(AV) = 2 A  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
See electrical characteristics  
tp = 10 ms, half sine wave  
PART  
BYW52  
BYW53  
BYW54  
BYW55  
BYW56  
SYMBOL  
VALUE  
UNIT  
V
VR = VRRM  
VR = VRRM  
VR = VRRM  
VR = VRRM  
VR = VRRM  
IFSM  
200  
400  
600  
800  
1000  
50  
V
Reverse voltage = repetitive peak reverse  
voltage  
V
V
V
Peak forward surge current  
Repetitive peak forward current  
Average forward current  
A
IFRM  
12  
A
= 180 °  
IF(AV)  
2
A
Pulse avalanche peak power  
tp = 20 μs half sine wave, Tj = 175 °C  
PR  
1000  
W
Pulse energy in avalanche mode, non  
repetitive (inductive load switch off)  
i2t-rating  
l(BR)R = 1 A, Tj = 175 °C  
ER  
i2t  
20  
mJ  
8
A2s  
°C  
Junction and storage temperature range  
Tj = Tstg  
-55 to +175  
Rev. 1.9, 21-Feb-18  
Document Number: 86049  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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