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BYW29ED

更新时间: 2024-09-25 22:48:39
品牌 Logo 应用领域
恩智浦 - NXP 二极管
页数 文件大小 规格书
8页 63K
描述
Rectifier diodes ultrafast, rugged

BYW29ED 数据手册

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Philips Semiconductors  
Product specification  
Rectifier diodes  
ultrafast, rugged  
BYW29EB, BYW29ED series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
VR = 150 V/ 200 V  
VF 0.895 V  
• Low forward volt drop  
• Fast switching  
• Soft recovery characteristic  
• Reverse surge capability  
• High thermal cycling performance  
• Low thermal resistance  
k
tab  
a
3
IF(AV) = 8 A  
IRRM = 0.2 A  
trr 25 ns  
GENERAL DESCRIPTION  
Ultra-fast, epitaxial rectifier diodes intendedfor useas output rectifiers inhigh frequency switchedmode powersupplies.  
The BYW29EB series is supplied in the SOT404 surface mounting package.  
The BYW29ED series is supplied in the SOT428 surface mounting package.  
PINNING  
SOT404  
SOT428  
PIN  
DESCRIPTION  
no connection  
cathode1  
tab  
tab  
1
2
3
anode  
2
2
1
3
1
3
tab  
cathode  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER CONDITIONS  
BYW29EB/ BYW29ED  
MIN.  
MAX.  
UNIT  
-150  
-200  
VRRM  
Peak repetitive reverse  
-
-
150  
150  
150  
200  
200  
200  
V
V
voltage  
VRWM  
Working peak reverse  
voltage  
VR  
Continuous reverse voltage  
-
-
V
A
IF(AV)  
Average rectified forward  
current  
square wave; δ = 0.5; Tmb 128 ˚C  
square wave; δ = 0.5; Tmb 128 ˚C  
8
IFRM  
IFSM  
Repetitive peak forward  
current  
-
16  
A
Non-repetitive peak forward t = 10 ms  
current  
-
-
80  
88  
A
A
t = 8.3 ms  
sinusoidal; with reapplied VRRM(max)  
tp = 2 µs; δ = 0.001  
IRRM  
IRSM  
Tj  
Peak repetitive reverse  
surge current  
-
0.2  
0.2  
A
A
Peak non-repetitive reverse tp = 100 µs  
surge current  
-
-
Operating junction  
150  
150  
˚C  
˚C  
temperature  
Tstg  
Storage temperature  
- 40  
1. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.  
November 1998  
1
Rev 1.300  

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