5秒后页面跳转
BYV29 PDF预览

BYV29

更新时间: 2024-09-24 22:50:23
品牌 Logo 应用领域
恩智浦 - NXP 整流二极管
页数 文件大小 规格书
5页 46K
描述
Rectifier diodes ultrafast

BYV29 技术参数

生命周期:Obsolete零件包装代码:TO-220AC
包装说明:R-PSIP-T2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.6
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PSIP-T2
元件数量:1端子数量:2
最大输出电流:9 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
认证状态:Not Qualified最大重复峰值反向电压:500 V
最大反向恢复时间:0.05 µs表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

BYV29 数据手册

 浏览型号BYV29的Datasheet PDF文件第2页浏览型号BYV29的Datasheet PDF文件第3页浏览型号BYV29的Datasheet PDF文件第4页浏览型号BYV29的Datasheet PDF文件第5页 
Philips Semiconductors  
Product specification  
Rectifier diodes  
ultrafast  
BYV29 series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• Low forward volt drop  
• Fast switching  
VR = 300 V/ 400 V/ 500 V  
• Soft recovery characteristic  
• High thermal cycling performance  
• Low thermal resistance  
k
1
a
2
VF 1.03 V  
IF(AV) = 9 A  
trr 60 ns  
GENERAL DESCRIPTION  
PINNING  
SOD59 (TO220AC)  
Ultra-fast, epitaxial rectifier diodes  
intended for use as output rectifiers  
in high frequency switched mode  
power supplies.  
PIN  
DESCRIPTION  
cathode  
anode  
cathode  
tab  
1
2
The BYV29 series is supplied in the  
conventional  
leaded  
SOD59  
tab  
(TO220AC) package.  
1
2
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER CONDITIONS  
MIN.  
MAX.  
UNIT  
BYV29  
-300  
300  
300  
300  
-400  
400  
400  
400  
-500  
500  
500  
500  
VRRM  
VRWM  
VR  
Peak repetitive reverse voltage  
Crest working reverse voltage  
Continuous reverse voltage  
-
-
-
V
V
V
IF(AV)  
IFRM  
IFSM  
Average forward current1  
square wave; δ = 0.5;  
mb 123 ˚C  
-
9
A
T
Repetitive peak forward current t = 25 µs; δ = 0.5;  
-
18  
A
T
mb 123 ˚C  
Non-repetitive peak forward  
current.  
t = 10 ms  
-
-
100  
110  
A
A
t = 8.3 ms  
sinusoidal; with reapplied  
VRRM(max)  
Tstg  
Tj  
Storage temperature  
Operating junction temperature  
-40  
-
150  
150  
˚C  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-mb  
Thermal resistance junction to  
mounting base  
Thermal resistance junction to in free air.  
ambient  
-
-
2.5  
K/W  
Rth j-a  
-
60  
-
K/W  
1 Neglecting switching and reverse current losses.  
September 1998  
1
Rev 1.300  

与BYV29相关器件

型号 品牌 获取价格 描述 数据表
BYV29-300 NXP

获取价格

Rectifier diodes ultrafast
BYV29-300 VISHAY

获取价格

Ultrafast Rectifier
BYV29-300/B ETC

获取价格

AFVR-DIODE
BYV29-300-E3/45 VISHAY

获取价格

DIODE GEN PURP 300V 8A TO220AC
BYV29-300HE3/45 VISHAY

获取价格

DIODE GEN PURP 300V 8A TO220AC
BYV29-300-HE3/45 VISHAY

获取价格

DIODE 8 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, R
BYV29300M SEME-LAB

获取价格

HERMETICALLY SEALED FAST RECOVERY SILICON RECTIFIER FOR HI.REL APPLICATIONS
BYV29-300M SEME-LAB

获取价格

HERMETICALLY SEALED FAST RECOVERY SILICON RECTIFIER FOR HI.REL APPLICATIONS
BYV29-300M_04 SEME-LAB

获取价格

HERMETICALLY SEALED FAST RECOVERY SILICON RECTIFIER FOR HI-REL APPLICATIONS
BYV29-300SMD SEME-LAB

获取价格

HERMETICALLY SEALED FAST RECOVERY SILICON RECTIFIER FOR HI-REL APPLICATIONS