Datasheet > BYV28-2GE

BYV28-2GE

更新时间： 2024-11-26 11:53:23

品牌	Logo	应用领域
海湾 - GULFSEMI		/
页数	文件大小	规格书
2页	90K
描述
GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT SILICON RECTIFIER VOLTAGE:600V CURRENT:3.5A

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BYV28-2GE 数据手册

BYV28-1GE THRU BYV28-6GE

GLASS PASSIVATED JUNCTION

ULTRAFAST EFFICIENT SILICON RECTIFIER

VOLTAGE:600V

CURRENT:3.5A

DO-201AD

FEATURE

• Plastic package has Underwriters Laboratories

Flammability Classification 94V-0

• Ideally suited for use in very high frequency switching

power supplies, inverters and as free wheeling diodes

• Ultra fast recovery time for high efficiency

• Excellent high temperature switching

• Glass passivated junction

• High temperature soldering guaranteed:

250°C/10 seconds, 0.375" (9.5mm) lead length,

MECHANICAL DATA

Case: JEDEC DO-201AD molded plastic body over

passivated chip

Terminals: Plated axial leads, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight: 0.045 oz., 1.2 g

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)

SYMBOL

BYV28-1GE

units

BYV28-2GE BYV28-4GE BYV28-6GE

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Vrrm

Vrms

Vdc

100

200

140

200

400

280

400

600

420

600

Maximum DC blocking Voltage

Maximum Average Forward Rectified

Ta=25°C

Peak Forward Surge Current 8.3ms single

half sine-wave superimposed on rated load

Maximum Forward Voltage at rated Forward

100

If(av)

Ifsm

3.5

Trr

1.02

1.05

1.25

Current and 25°C

IF=3.5A

Maximum Reverse Recovery Time (Note 1)

Typical thermal resistance junction

to ambient

Rθja

°C/W

(Note 2)

=25°C

=150°C

µA

Maximum DC Reverse Current

at rated DC blocking voltage

150

Storage and Operating Temperature Range

Tstg, Tj

-55 to +150

°C

Note:

1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A

2.Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 µm, see Fig.6

For more information please refer to the “General Part of associated Handbook”.

Rev.A1

www.gulfsemi.com

中文翻译

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BYV28-300/20112	NXP	获取价格	DIODE 3.5 A, 300 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-300/20113	NXP	获取价格	DIODE 3.5 A, 300 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-300/20133	NXP	获取价格	DIODE 3.5 A, 300 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-300/21112	NXP	获取价格	DIODE 3.5 A, 300 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-300/21113	NXP	获取价格	DIODE 3.5 A, 300 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-300/21133	NXP	获取价格	DIODE 3.5 A, 300 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-300/22112	NXP	获取价格	DIODE 3.5 A, 300 V, SILICON, RECTIFIER DIODE, Rectifier Diode

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