5秒后页面跳转
BYV28-200/4 PDF预览

BYV28-200/4

更新时间: 2024-11-27 03:09:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 104K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3.5A, 200V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

BYV28-200/4 数据手册

 浏览型号BYV28-200/4的Datasheet PDF文件第2页浏览型号BYV28-200/4的Datasheet PDF文件第3页浏览型号BYV28-200/4的Datasheet PDF文件第4页 
BYV28/...  
Vishay Semiconductors  
Ultra Fast Avalanche Sinterglass Diode  
Features  
• Controlled avalanche characteristic  
• Low forward voltage  
e2  
• Ultra fast recovery time  
949588  
• Glass passivated junction  
• Hermetically sealed package  
• Lead (Pb)-free component  
Mechanical Data  
Case: SOD-64 Sintered glass case  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Terminals: Plated axial leads, solderable per  
MIL-STD-750, Method 2026  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Applications  
Very fast rectification e.g. for switch mode power sup-  
ply  
Weight: approx. 858 mg  
Parts Table  
Part  
Type differentiation  
VR = 50 V; IFAV = 3.5 A  
Package  
SOD-64  
BYV28-50  
BYV28-100  
BYV28-150  
BYV28-200  
V
V
V
R = 100 V; IFAV = 3.5 A  
R = 150 V; IFAV = 3.5 A  
R = 200 V; IFAV = 3.5 A  
SOD-64  
SOD-64  
SOD-64  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Part  
Symbol  
VRSM  
Value  
55  
Unit  
V
Peak reverse voltage, non  
repetitive  
see electrical characteristics  
BYV28/50  
BYV28/100  
BYV28/150  
BYV28/200  
BYV28/50  
VRSM  
VRSM  
110  
165  
220  
50  
V
V
V
V
VRSM  
Reverse voltage = Repetitive  
peak reverse voltage  
see electrical characteristics  
tp = 10 ms, half sinewave  
V
R = VRRM  
BYV28/100  
BYV28/150  
BYV28/200  
VR = VRRM  
100  
150  
200  
90  
V
V
V
R = VRRM  
R = VRRM  
IFSM  
V
V
Peak forward surge current  
Repetitive peak forward current  
Average forward current  
A
IFRM  
25  
A
IFAV  
3.5  
20  
A
Pulse energy in avalanche  
mode, non repetitive (inductive  
load switch off)  
I
(BR)R = 1 A, Tj = 175 °C  
ER  
mJ  
Junction and storage  
temperature range  
Tj = Tstg  
- 55 to + 175  
°C  
Document Number 86044  
Rev. 1.6, 14-Apr-05  
www.vishay.com  
1

与BYV28-200/4相关器件

型号 品牌 获取价格 描述 数据表
BYV28-200/40112 NXP

获取价格

DIODE 3.5 A, 200 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-200/40113 NXP

获取价格

DIODE 3.5 A, 200 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-200/40133 NXP

获取价格

DIODE 3.5 A, 200 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-200/41112 NXP

获取价格

DIODE 3.5 A, 200 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-200/41113 NXP

获取价格

DIODE 3.5 A, 200 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-200/41133 NXP

获取价格

DIODE 3.5 A, 200 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-200/50112 NXP

获取价格

DIODE 3.5 A, 200 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-200/50113 NXP

获取价格

DIODE 3.5 A, 200 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-200/50133 NXP

获取价格

DIODE 3.5 A, 200 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-200/A52R ETC

获取价格

DIODE ULTRA FAST