5秒后页面跳转
BYV28-150 PDF预览

BYV28-150

更新时间: 2024-11-24 17:00:31
品牌 Logo 应用领域
EIC /
页数 文件大小 规格书
2页 93K
描述
Avalanche Rectifiers

BYV28-150 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:O-PALF-W2
Reach Compliance Code:compliant风险等级:5.73
Is Samacsys:N其他特性:HIGH RELIABILITY
应用:FAST RECOVERY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JESD-30 代码:O-PALF-W2最大非重复峰值正向电流:90 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:3.5 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM最大重复峰值反向电压:150 V
最大反向电流:5 µA最大反向恢复时间:0.035 µs
子类别:Rectifier Diodes表面贴装:NO
技术:AVALANCHE端子形式:WIRE
端子位置:AXIALBase Number Matches:1

BYV28-150 数据手册

 浏览型号BYV28-150的Datasheet PDF文件第2页 
www.eicsemi.com  
EPITAXIAL AVALANCHE DIODES  
BYV28 SERIES  
D2A  
PRV : 50 - 200 Volts  
Io : 3.5 Amperes  
1.00 (25.4)  
MIN.  
FEATURES :  
0.161 (4.1)  
0.154 (3.9)  
* High current capability  
* High surge current capability  
* High reliability  
0.284 (7.2)  
0.268 (6.8)  
* Low reverse current  
* Low forward voltage drop  
* Very fast recovery  
* Pb / RoHS Free  
1.00 (25.4)  
MIN.  
0.040 (1.02)  
0.0385 (0.98)  
MECHANICAL DATA :  
* Case : D2A Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
Dimensions in inches and ( millimeters )  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
* Weight : 0.645 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
SYMBOL BYV28-50 BYV28-100 BYV28-150 BYV28-200 UNIT  
Maximum Repetitive Peak Reverse Voltage  
VRRM  
VR  
50  
50  
55  
100  
100  
110  
150  
150  
165  
200  
200  
220  
V
V
Maximum Continuous Reverse Voltage  
Min. Reverse Avalanche Breakdown Voltage @ IR = 0.1 mA  
Maximum Average Forward Current Ttp = 85 °C (Note 1)  
Maximum Non-Repetitive Peak Forward Surge Current  
Maximum Repetitive Peak Forward Current  
V(BR)R-min.  
IF(AV)  
IFSM  
IFRM  
VF  
V
3.5  
90  
25  
1.1  
5
A
A
A
Maximum Forward Voltage at IF = 5.0 Amps. (Note 2)  
Maximum Reverse Current at VR = VRRM max , Tj = 25 °C  
Maximum Reverse Current at VR = VRRM max , Tj = 165 °C  
Maximum Reverse Recovery Time (Note 3)  
V
IR  
mA  
mA  
ns  
K / W  
°C  
°C  
IR(H)  
Trr  
150  
35  
25  
Thermal Resistance - Junction to tie-point (Note 1)  
Junction Temperature Range  
Rth j-tp  
TJ  
- 65 to + 175  
- 65 to + 175  
Storage Temperature Range  
TSTG  
Notes :  
(1) Lead Length 10 mm.  
(2) Measured under pulse conditions to avoid excessive dissipation.  
(3) Switched from IF = 0.5A to IR = 1A.  
Page 1 of 2  
Rev. 03 : July 8, 2005  

与BYV28-150相关器件

型号 品牌 获取价格 描述 数据表
BYV28-150/20113 NXP

获取价格

DIODE 3.5 A, 150 V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier
BYV28-150/20133 NXP

获取价格

DIODE 3.5 A, 150 V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier
BYV28-150/21112 NXP

获取价格

DIODE 3.5 A, 150 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-150/21113 NXP

获取价格

DIODE 3.5 A, 150 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-150/21133 NXP

获取价格

DIODE 3.5 A, 150 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-150/22112 NXP

获取价格

DIODE 3.5 A, 150 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-150/22113 NXP

获取价格

DIODE 3.5 A, 150 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-150/22133 NXP

获取价格

DIODE 3.5 A, 150 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-150/30112 NXP

获取价格

DIODE 3.5 A, 150 V, SILICON, RECTIFIER DIODE, Rectifier Diode
BYV28-150/30113 NXP

获取价格

DIODE 3.5 A, 150 V, SILICON, RECTIFIER DIODE, Rectifier Diode