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BYV28-100-TR PDF预览

BYV28-100-TR

更新时间: 2024-11-23 15:44:55
品牌 Logo 应用领域
威世 - VISHAY 超快恢复二极管快速恢复二极管局域网
页数 文件大小 规格书
4页 113K
描述
DIODE 3.5 A, 100 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode

BYV28-100-TR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:E-LALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.18其他特性:METALLURGICALLY BONDED
应用:ULTRA FAST RECOVERY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.89 V
JESD-30 代码:E-LALF-W2JESD-609代码:e2
湿度敏感等级:1最大非重复峰值正向电流:90 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:3.5 A
封装主体材料:GLASS封装形状:ELLIPTICAL
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向恢复时间:0.03 µs子类别:Rectifier Diodes
表面贴装:NO技术:AVALANCHE
端子面层:Tin/Silver (Sn/Ag)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BYV28-100-TR 数据手册

 浏览型号BYV28-100-TR的Datasheet PDF文件第2页浏览型号BYV28-100-TR的Datasheet PDF文件第3页浏览型号BYV28-100-TR的Datasheet PDF文件第4页 
BYV28-50, BYV28-100, BYV28-150, BYV28-200  
www.vishay.com  
Vishay Semiconductors  
Ultra-Fast Avalanche Sinterglass Diode  
FEATURES  
• Controlled avalanche characteristic  
• Low forward voltage  
• Ultra fast recovery time  
• Glass passivated junction  
• Hermetically sealed package  
• AEC-Q101 qualified  
949588  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
MECHANICAL DATA  
Case: SOD-64  
APPLICATIONS  
Terminals: plated axial leads, solderable per MIL-STD-750,  
method 2026  
• Very fast rectification e.g. for switch mode power supply  
Polarity: color band denotes cathode end  
Mounting position: any  
Weight: approx. 858 mg  
ORDERING INFORMATION (Example)  
DEVICE NAME  
ORDERING CODE  
TAPED UNITS  
MINIMUM ORDER QUANTITY  
BYV28-200  
BYV28-200-TR  
2500 per 10" tape and reel  
2500 per ammopack  
12 500  
12 500  
BYV28-200  
BYV28-200-TAP  
PARTS TABLE  
PART  
TYPE DIFFERENTIATION  
PACKAGE  
SOD-64  
SOD-64  
SOD-64  
SOD-64  
BYV28-50  
BYV28-100  
BYV28-150  
BYV28-200  
VR = 50 V; IF(AV) = 3.5 A  
V
R = 100 V; IF(AV) = 3.5 A  
R = 150 V; IF(AV) = 3.5 A  
V
VR = 200 V; IF(AV) = 3.5 A  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
BYV28-50 VR = VRRM  
BYV28-100 R = VRRM  
BYV28-150 VR = VRRM  
SYMBOL  
VALUE  
50  
UNIT  
V
V
100  
150  
200  
55  
V
Reverse voltage = repetitive peak reverse  
voltage  
See electrical characteristics  
V
BYV28-200  
BYV28-50  
BYV28-100  
BYV28-150  
BYV28-200  
V
R = VRRM  
VRSM  
VRSM  
VRSM  
VRSM  
IFSM  
V
V
110  
165  
220  
90  
V
Peak reverse voltage, non repetitive  
See electrical characteristics  
tp = 10 ms, half sine wave  
V
V
Peak forward surge current  
Repetitive peak forward current  
Average forward current  
A
IFRM  
25  
A
IF(AV)  
3.5  
A
Pulse energy in avalanche mode, non  
repetitive (inductive load switch off)  
I(BR)R = 1 A, Tj = 175 °C  
ER  
20  
mJ  
°C  
Junction and storage temperature range  
Tj = Tstg  
- 55 to + 175  
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Lead length l = 10 mm, TL = constant  
On PC board with spacing 25 mm  
RthJA  
25  
70  
K/W  
K/W  
Junction ambient  
RthJA  
Rev. 1.9. 02-May-16  
Document Number: 86044  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

BYV28-100-TR 替代型号

型号 品牌 替代类型 描述 数据表
BYV28-100-TAP VISHAY

完全替代

DIODE 3.5 A, 100 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKA
MUR410RLG ONSEMI

功能相似

SWITCHMODE TM Power Rectifiers
MUR410G ONSEMI

功能相似

SWITCHMODE TM Power Rectifiers

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