Datasheet > BYV28-100-E3/54

BYV28-100-E3/54

更新时间： 2024-11-27 03:21:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	104K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3.5A, 100V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

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BYV28-100-E3/54 数据手册

BYV28/...

Vishay Semiconductors

Ultra Fast Avalanche Sinterglass Diode

Features

• Controlled avalanche characteristic

• Low forward voltage

• Ultra fast recovery time

949588

• Glass passivated junction

• Hermetically sealed package

• Lead (Pb)-free component

Mechanical Data

Case: SOD-64 Sintered glass case

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Terminals: Plated axial leads, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Applications

Very fast rectification e.g. for switch mode power sup-

ply

Weight: approx. 858 mg

Parts Table

Part

Type differentiation

V_R= 50 V; I_FAV= 3.5 A

Package

SOD-64

BYV28-50

BYV28-100

BYV28-150

BYV28-200

_R= 100 V; I_FAV= 3.5 A

_R= 150 V; I_FAV= 3.5 A

_R= 200 V; I_FAV= 3.5 A

SOD-64

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Part

Symbol

V_RSM

Value

Unit

Peak reverse voltage, non

repetitive

see electrical characteristics

BYV28/50

BYV28/100

BYV28/150

BYV28/200

BYV28/50

V_RSM

110

165

220

V_RSM

Reverse voltage = Repetitive

peak reverse voltage

see electrical characteristics

t_p= 10 ms, half sinewave

_R= V_RRM

BYV28/100

BYV28/150

BYV28/200

V_R= V_RRM

100

150

200

_R= V_RRM

I_FSM

Peak forward surge current

Repetitive peak forward current

Average forward current

I_FRM

I_FAV

3.5

Pulse energy in avalanche

mode, non repetitive (inductive

load switch off)

_(BR)R= 1 A, T_j= 175 °C

E_R

Junction and storage

temperature range

T_j= T_stg

- 55 to + 175

°C

Document Number 86044

Rev. 1.6, 14-Apr-05

www.vishay.com

12 3 4

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