Datasheet > BYV26DGP_11

BYV26DGP_11

更新时间： 2024-09-26 09:03:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	81K
描述
Glass Passivated Ultrafast Rectifier

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中文翻译

获取价格

数据手册

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BYV26DGP_11 数据手册

BYV26DGP, BYV26EGP

Vishay General Semiconductor

Glass Passivated Ultrafast Rectifier

FEATURES

• Superectifier structure for high reliability condition

• Cavity-free glass-passivated junction

• Ultrafast reverse recovery time

• Low forward voltage drop

SUPERECTIFIER^®

DO-204AC (DO-15)

• Low switching losses, high efficiency

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectification and freewheeling

application in switching mode converters and inverters for

consumer, computer and telecommunication.

PRIMARY CHARACTERISTICS

I_F(AV)

1.0 A

V_RRM

I_FSM

t_rr

800 V, 1000 V

30 A

MECHANICAL DATA

Case: DO-204AC, molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

75 ns

V_F

1.3 V

T_Jmax.

175 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

BYV26DGP

800

BYV26EGP

1000

UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

560

700

Maximum DC blocking voltage

V_DC

800

1000

Maximum average forward rectified current 0.375" (9.5 mm)

lead length (fig. 1)

I_F(AV)

I_FSM

1.0

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

(1)

Non repetitive peak reverse energy

E_RSM

°C

Operating junction and storage temperature range

T_J, T_STG

- 65 to + 175

Note

(1)

Peak reverse energy measured at I_R= 400 mA, T_J= T_Jmax. on inductive load, t = 20 μs

Document Number: 88554

Revision: 15-Mar-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

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与BYV26DGP_11相关器件

型号	品牌	获取价格	描述	数据表
BYV26DGPE3	VISHAY	获取价格	DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, LEAD FREE, PLASTIC, DO-15, 2 PIN, Signa
BYV26DGP-E3	VISHAY	获取价格	DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, LEAD FREE, PLASTIC, DO-15, 2 PIN, Signa
BYV26DGP-E3/100	VISHAY	获取价格	DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
BYV26DGP-E3/23	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AC, ROHS COMPLIANT, PLASTIC, D
BYV26DGP-E3/4	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AC, ROHS COMPLIANT, PLASTIC, D
BYV26DGP-E3/4E	VISHAY	获取价格	DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
BYV26DGP-E3/4F	VISHAY	获取价格	DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
BYV26DGP-E3/4G	VISHAY	获取价格	DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
BYV26DGP-E3/51	VISHAY	获取价格	DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
BYV26DGP-E3/53	VISHAY	获取价格	DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode

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