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BYT200

更新时间: 2024-11-16 21:54:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 68K
描述
Ultra Fast Recovery Silicon Power Rectifier

BYT200 技术参数

生命周期:ActiveReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.6配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.2 V
最大非重复峰值正向电流:100 A元件数量:1
最高工作温度:150 °C最大输出电流:8 A
最大重复峰值反向电压:200 V子类别:Rectifier Diodes
表面贴装:NOBase Number Matches:1

BYT200 数据手册

 浏览型号BYT200的Datasheet PDF文件第2页浏览型号BYT200的Datasheet PDF文件第3页浏览型号BYT200的Datasheet PDF文件第4页浏览型号BYT200的Datasheet PDF文件第5页 
BYT115/200/400  
Vishay Telefunken  
Ultra Fast Recovery Silicon Power Rectifier  
Features  
Multiple diffusion  
Epitaxial – planar  
Ultra fast forward recovery time  
Ultra fast reverse recovery time  
Low reverse current  
Very good reverse current stability at high tem-  
perature  
14282  
Low thermal resistance  
Applications  
Fast rectifiers in S.M.P.S  
Freewheeling diodes and snubber diodes in motor  
control circuits  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Reverse voltage  
=Repetitive peak reverse voltage  
Test Conditions  
Type  
Symbol  
Value  
200  
400  
100  
30  
Unit  
BYT115/200 V =V  
BYT115/400 V =V  
V
V
A
A
A
R
RRM  
RRM  
R
Peak forward surge current  
Repetitive peak forward current  
Average forward current  
t =10ms  
p
I
FSM  
I
FRM  
I
15  
FAV  
Junction and storage  
temperature range  
T =T  
–55...+150  
C
j
stg  
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction case  
Junction ambient  
Test Conditions  
Symbol  
Value  
1.75  
85  
Unit  
K/W  
K/W  
R
thJC  
R
thJA  
Rev. A2, 24-Jun-98  
1 (5)  

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