Datasheet > BYR29-800

BYR29-800

更新时间： 2024-09-27 22:25:35

品牌	Logo	应用领域
恩智浦 - NXP		整流二极管局域网
页数	文件大小	规格书
5页	46K
描述
Rectifier diodes ultrafast

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数据手册
替代型号

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BYR29-800 数据手册

Philips Semiconductors

Product specification

Rectifier diodes

ultrafast

BYR29 series

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

• Fast switching

• Soft recovery characteristic

• Reverse surge capability

• High thermal cycling performance

• Low thermal resistance

V_R= 500 V/ 600 V/ 700 V /

800 V

V_F≤ 1.5 V

I_F(AV)= 8 A

t_rr≤ 75 ns

GENERAL DESCRIPTION

PINNING

SOD59 (TO220AC)

Ultra-fast, epitaxial rectifier diodes

intended for use as output rectifiers

in high frequency switched mode

power supplies.

DESCRIPTION

cathode

anode

cathode

tab

The BYR29 series is supplied in the

conventional

leaded

SOD59

tab

(TO220AC) package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

BYR29

MIN.

MAX.

UNIT

-500

500

-600

600

-700

700

-800

800

V_RRM

V_RWM

V_R

Peak repetitive reverse voltage

Crest working reverse voltage

Continuous reverse voltage

I_F(AV)

Average forward current¹

square wave;

δ = 0.5;

T_mb≤ 115 ˚C

I_FRM

I_FSM

Repetitive peak forward current t = 25 µs; δ = 0.5;

_mb≤ 115 ˚C

Non-repetitive peak forward

current

t = 10 ms

t = 8.3 ms

sinusoidal; with

reapplied V_RRM(max)

T_stg

T_j

Storage temperature

Operating junction temperature

-40

150

˚C

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-mb}

R_{th j-a}

Thermal resistance junction to

mounting base

Thermal resistance junction to in free air.

ambient

2.5

K/W

1 Neglecting switching and reverse current losses

September 1998

Rev 1.300

12 3 4 5

中文翻译

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BYR29-800 替代型号

型号	品牌	替代类型	描述	数据表
MUR880EG	ONSEMI	功能相似	ULTRAFAST RECTIFIERS 8.0 A, 800 V - 1000 V
STTH812D	STMICROELECTRONICS	功能相似	Ultrafast recovery - 1200 V diode
MUR8100EG	ONSEMI	功能相似	SWITCHMODE Power Rectifiers

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