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BYM36A-TR

更新时间: 2024-11-27 20:38:11
品牌 Logo 应用领域
威世 - VISHAY 快速恢复二极管局域网
页数 文件大小 规格书
5页 110K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

BYM36A-TR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.64
应用:FAST RECOVERY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.6 V
JESD-30 代码:E-LALF-W2JESD-609代码:e2
湿度敏感等级:1最大非重复峰值正向电流:65 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:3 A
封装主体材料:GLASS封装形状:ELLIPTICAL
封装形式:LONG FORM峰值回流温度(摄氏度):260
最大重复峰值反向电压:200 V最大反向电流:5 µA
最大反向恢复时间:0.1 µs子类别:Rectifier Diodes
表面贴装:NO技术:AVALANCHE
端子面层:TIN SILVER端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

BYM36A-TR 数据手册

 浏览型号BYM36A-TR的Datasheet PDF文件第2页浏览型号BYM36A-TR的Datasheet PDF文件第3页浏览型号BYM36A-TR的Datasheet PDF文件第4页浏览型号BYM36A-TR的Datasheet PDF文件第5页 
BYM36A, BYM36B, BYM36C, BYM36D, BYM36E  
www.vishay.com  
Vishay Semiconductors  
Fast Avalanche Sinterglass Diode  
FEATURES  
• Glass passivated  
• Hermetically sealed package  
• Very low switching losses  
• Low reverse current  
• High reverse voltage  
• Material categorization:  
949588  
For definitions of compliance please see  
www.vishay.com/doc?99912  
MECHANICAL DATA  
Case: SOD-64  
APPLICATIONS  
Terminals: plated axial leads, solderable per MIL-STD-750,  
method 2026  
• Switched mode power supplies  
• High-frequency inverter circuits  
Polarity: color band denotes cathode end  
Mounting position: any  
Weight: approx. 858 mg  
ORDERING INFORMATION (Example)  
DEVICE NAME  
ORDERING CODE  
TAPED UNITS  
MINIMUM ORDER QUANTITY  
BYM36E  
BYM36E-TR  
2500 per 10" tape and reel  
2500 per ammopack  
12 500  
12 500  
BYM36E  
BYM36E-TAP  
PARTS TABLE  
PART  
TYPE DIFFERENTIATION  
VR = 200 V; IF(AV) = 3 A  
VR = 400 V; IF(AV) = 3 A  
PACKAGE  
SOD-64  
SOD-64  
SOD-64  
SOD-64  
SOD-64  
BYM36A  
BYM36B  
BYM36C  
BYM36D  
BYM36E  
V
R = 600 V; IF(AV) = 3 A  
R = 800 V; IF(AV) = 2.9 A  
VR = 1000 V; IF(AV) = 2.9 A  
V
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
See electrical characteristics  
tp = 10 ms, half sine wave  
PART  
SYMBOL  
VALUE  
UNIT  
V
BYM36A  
BYM36B  
BYM36C  
BYM36D  
BYM36E  
VR = VRRM  
200  
V
V
R = VRRM  
R = VRRM  
400  
V
Reverse voltage  
= repetitive peak reverse voltage  
600  
V
VR = VRRM  
R = VRRM  
IFSM  
800  
V
V
1000  
V
Peak forward surge current  
Average forward current  
65  
A
BYM36A  
BYM36B  
BYM36C  
BYM36D  
BYM36E  
IF(AV)  
IF(AV)  
IF(AV)  
IF(AV)  
IF(AV)  
ER  
3
A
3
A
3
A
2.9  
2.9  
A
A
Non repetitive reverse avalanche energy  
Junction and storage temperature range  
I(BR)R = 1 A, inductive load  
20  
mJ  
°C  
Tj = Tstg  
- 55 to + 175  
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
RthJA  
VALUE  
UNIT  
Lead length l = 10 mm, TL = constant  
On PC board with spacing 25 mm  
25  
70  
K/W  
K/W  
Junction ambient  
RthJA  
Rev. 1.8, 03-Sep-12  
Document Number: 86012  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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