BYD17M

更新时间： 2024-09-25 09:03:31

品牌	Logo	应用领域
EIC		整流二极管局域网
页数	文件大小	规格书
2页	113K
描述
GENERAL PURPOSE CONTROLLED AVALANCHE RECTIFIERS

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中文翻译

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技术参数
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BYD17M 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.74
Is Samacsys：	N	Base Number Matches：	1

BYD17M 数据手册

Certificate TH97/10561QM

Certificate TW00/17276EM

GENERAL PURPOSE CONTROLLED

AVALANCHE RECTIFIERS

BYD17D - BYD17M

PRV : 200 - 1000 Volts

Io : 1.5 Amperes

MELF (Plastic)

Cathode Mark

FEATURES :

φ 0.102 (2.6)

0.094 (2.4)

0.022(0.55)

* Glass passivated

* High maximum operating temperature

* Low leakage current

* Excellent stability

0.205(5.2)

0.189(4.8)

* Guaranteed avalanche energy

absorption capability

* Smallest surface mount rectifier outline

* Pb / RoHS Free

Dimensions in inches and ( millimeters )

MECHANICAL DATA :

* Case : Molded plastic

* Terminals : Plated Terminals, solderable per

MIL-STD-750 Method 2026

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.116 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified.)

BYD BYD BYD BYD BYD

RATING

SYMBOL

UNIT

17D

17G

17J

17K 17M

V_RRM

V_RWM

Maximum Repetitive Peak Reverse Voltage

Maximum Crest Working Reverse Voltage

200

400

600

800

900

1000

1100

200

225

400

450

600

V_R

Maximum Continuous Reverse Voltage

600

Min. Reverse Avalanche Breakdown Voltage at I_R= 0.1 mA

Maximum Average Forward Current Ttp = 105 °C

V_(BR)R-min

650

1.5

I_F(AV)

I_FSM

V_F

(Note 1)

Ta = 65 °C; PCB mounting

0.6

Maximum Non-Repetitive Peak Forward Surge Current (Note 2)

at I_F= 1 A , Tj = 25 °C

Maximum Forward Voltage

Maximum Reverse Current

1.05

at I_F= 1 A , Tj = Tjmax

0.93

at V_R= V_RRMmax, Tj = 25 °C

at V_R= V_RRMmax, Tj = 165 °C

I_R

I_R(H)

Trr

1.0

μA

100

Typical Reverse Recovery Time (Note 3)

Thermal Resistance from Junction to Tie-Point

Thermal Resistance from Junction to Ambient (Note 4)

Operating Junction Temperature Range

Storage Temperature Range

μs

Rth j-tp

Rth j-a

T_J

K / W

°C

150

- 65 to + 175

T_STG

°C

Notes :

(1) Averaged over any 20 ms period.

(2) t = 10ms half sine wave; Tj = Tjmax prior to surge; V = V_RRMmax

(3) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.

(4) Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥ 40 μm

Page 1 of 2

Rev. 02 : November 7, 2006

中文翻译

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与BYD17M相关器件

型号	品牌	获取价格	描述	数据表
BYD17M,115	NXP	获取价格	DIODE 0.6 A, 1000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, SO-2, Signal Diode
BYD17M,135	NXP	获取价格	DIODE 0.6 A, 1000 V, SILICON, SIGNAL DIODE, GLASS, SO-2, Signal Diode
BYD17M/T1	ETC	获取价格	DIODE 1.4A CONTROLLED AVALANCHE
BYD17M/T3	NXP	获取价格	DIODE 0.6 A, 1000 V, SILICON, SIGNAL DIODE, GLASS, SO-2, Signal Diode
BYD17MA	EIC	获取价格	GENERAL PURPOSE CONTROLLED AVALANCHE RECTIFIERS
BYD17MT/R	NXP	获取价格	DIODE 0.6 A, 1000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, SO-2, Signal Diode
BYD17MT/R	PHILIPS	获取价格	Rectifier Diode, 1 Element, 1.5A, 1000V V(RRM),
BYD17MTRL	NXP	获取价格	DIODE 0.6 A, 1000 V, SILICON, SIGNAL DIODE, Signal Diode
BYD17MTRL13	NXP	获取价格	DIODE 0.6 A, 1000 V, SILICON, SIGNAL DIODE, Signal Diode
BYD17SERIES	ETC	获取价格	General purpose controlled avalanche rectifiers

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