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BYD17M,115 PDF预览

BYD17M,115

更新时间: 2024-09-26 15:28:55
品牌 Logo 应用领域
恩智浦 - NXP 局域网二极管
页数 文件大小 规格书
11页 92K
描述
DIODE 0.6 A, 1000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, SO-2, Signal Diode

BYD17M,115 技术参数

生命周期:Obsolete零件包装代码:SOD
包装说明:O-LELF-R2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.8
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-LELF-R2元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:0.6 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
参考标准:IEC 134最大重复峰值反向电压:1000 V
最大反向恢复时间:3 µs表面贴装:YES
技术:AVALANCHE端子形式:WRAP AROUND
端子位置:ENDBase Number Matches:1

BYD17M,115 数据手册

 浏览型号BYD17M,115的Datasheet PDF文件第2页浏览型号BYD17M,115的Datasheet PDF文件第3页浏览型号BYD17M,115的Datasheet PDF文件第4页浏览型号BYD17M,115的Datasheet PDF文件第5页浏览型号BYD17M,115的Datasheet PDF文件第6页浏览型号BYD17M,115的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BYD17 series  
General purpose  
controlled avalanche rectifiers  
Product specification  
1999 Nov 11  
Supersedes data of 1996 Sep 26  

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