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BYC8B-600 PDF预览

BYC8B-600

更新时间: 2024-02-01 18:16:44
品牌 Logo 应用领域
恩智浦 - NXP 整流二极管开关超快恢复二极管快速恢复二极管
页数 文件大小 规格书
6页 65K
描述
Rectifier diode ultrafast, low switching loss

BYC8B-600 技术参数

生命周期:Obsolete包装说明:R-PSSO-G2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.42
其他特性:FREE WHEELING DIODE应用:ULTRA FAST RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PSSO-G2最大非重复峰值正向电流:60 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向恢复时间:0.052 µs表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
Base Number Matches:1

BYC8B-600 数据手册

 浏览型号BYC8B-600的Datasheet PDF文件第2页浏览型号BYC8B-600的Datasheet PDF文件第3页浏览型号BYC8B-600的Datasheet PDF文件第4页浏览型号BYC8B-600的Datasheet PDF文件第5页浏览型号BYC8B-600的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Rectifier diode  
ultrafast, low switching loss  
BYC8B-600  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
VR = 600 V  
• Extremely fast switching  
• Low reverse recovery current  
• Low thermal resistance  
• Reduces switching losses in  
associated MOSFET  
VF 1.85 V  
k
tab  
a
3
IF(AV) = 8 A  
trr = 19 ns (typ)  
APPLICATIONS  
PINNING  
SOT404  
• Active power factor correction  
• Half-bridge lighting ballasts  
• Half-bridge/ full-bridge switched  
mode power supplies.  
PIN  
DESCRIPTION  
no connection  
cathode1  
tab  
1
2
The BYC8B-600 is supplied in the  
SOT404 surface mounting  
package.  
3
anode  
2
tab  
cathode  
1
3
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER CONDITIONS  
MIN.  
MAX.  
UNIT  
VRRM  
VRWM  
VR  
Peak repetitive reverse voltage  
-
-
-
-
600  
600  
500  
8
V
V
V
A
Crest working reverse voltage  
Continuous reverse voltage  
Average forward current  
T
mb 110 ˚C  
δ = 0.5; with reapplied VRRM(max)  
mb 82 ˚C1  
IF(AV)  
;
;
T
IFRM  
IFSM  
Repetitive peak forward current δ = 0.5; with reapplied VRRM(max)  
-
16  
A
T
mb 82 ˚C1  
Non-repetitive peak forward  
current.  
t = 10 ms  
t = 8.3 ms  
-
-
55  
60  
A
A
sinusoidal; Tj = 150˚C prior to surge  
with reapplied VRWM(max)  
Tstg  
Tj  
Storage temperature  
Operating junction temperature  
-40  
-
150  
150  
˚C  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-mb  
Rth j-a  
Thermal resistance junction to  
mounting base  
Thermal resistance junction to minimum footprint, FR4 board  
ambient  
-
-
-
2.2  
-
K/W  
K/W  
50  
1 it is not possible to make connection to pin 2 of the SOT404 package  
October 1998  
1
Rev 1.200  
 

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