Datasheet > BYC5-1200PQ

BYC5-1200PQ

更新时间： 2025-07-19 19:34:59

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
10页	331K
描述
DIODE GEN PURP 1.2KV 5A TO220AC

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BYC5-1200PQ 数据手册

BYC5-1200P

Hyperfast power diode

Rev.01 - 12 October 2017

Product data sheet

1. General description

EEPP^TM- Efﬁciency Enhanced Pt Planar rectiﬁer in a SOD59 (2-lead TO-220AC) plastic package.

2. Features and beneﬁts

•

Fast switching

•

Reduces switching losses with improved lower reverse recovery charge

Soft recovery characteristics

Low thermal resistance

Low leakage current

Planar termination structure

High operating temperature capability (T_{j (max)}= 175°C)

Higher I_FSMcapability

3. Applications

•

Switched-Mode Power Supplies

Power factor correction diode

Uninterrupted Power Supply

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Values

Unit

Absolute maximum rating

V_RRM

I_F(AV)

I_FRM

repetitive peak reverse

voltage

1200

average forward current δ = 0.5 ; square-wave pulse; T_mb≤ 141 °C;

Fig. 1; Fig. 2; Fig. 3

repetitive peak forward δ = 0.5 ; t_p= 25 μs; T_mb≤ 141 °C;

current

square-wave pulse

I_FSM

non-repetitive peak

forward current

t_p= 10 ms; T_j(init)= 25 °C; sine-wave pulse;

Fig. 4

t_p= 8.3 ms; T_j(init)= 25 °C; sine-wave pulse

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

Unit

V_F

forward voltage

I_F= 5 A; T_j= 25 °C; Fig. 6

I_F= 5 A; T_j= 150 °C; Fig. 6

2.4

2.0

3.2

Dynamic characteristics

t_rrreverse recovery time

I_F= 1 A; V_R= 30 V; dI_F/dt = 100 A/μs;

T_j= 25 °C; Fig. 7

12 3 4 5 6 7...10

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