Datasheet > BY550- 800

BY550- 800

更新时间： 2024-11-08 12:56:59

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	373K
描述
5.0A plug-in rectifier diode 800V DO-201 series

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数据手册

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BY550- 800 数据手册

BY550-50 - BY550-1000

AXIAL LEADED SILICON RECTIFIER DIODES

VOLTAGE RANGE: 50 - 1000V

CURRENT: 5.0A

Features

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Mechanical Data

Case: DO-201AD, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 1.2 grams (approx.)

Mounting Position: Any

DO-201AD

Min

Dim

Max

25.40

7.20

9.50

1.30

5.30

1.20

4.80

Marking: Type Number

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

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Characteristic

Unit

Symbol

- 50

- 100

- 200

- 400

- 600

- 800

- 1000

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

V^RRM

V^RMS

V^DC

100

200

400

600

800

1000

700

140

200

280

400

420

600

560

800

Maximum DC Blocking Voltage

100

1000

Maximum Average Forward Current

0.375"(9.5mm) Lead Length Ta = 60°C

Peak Forward Surge Current

I^F

5.0

I^FSM

300

8.3ms Single half sine wave Superimposed

on rated load (JEDEC Method)

Maximum Forward Voltage at I^F= 5.0 Amps.

V^F

I^R

1.1

μA

Maximum DC Reverse Current

at rated DC Blocking Voltage

Ta = 25 °C

I^R(H)

C^J

Ta = 100 °C

μA

Typical Junction Capacitance (Note1)

Typical Thermal Resistance (Note2)

Junction Temperature Range

°C/W

°C

RθJA

- 65 to + 175

Storage Temperature Range

T^STG

°C

Notes :

(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC

(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.

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