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BY550-1000 PDF预览

BY550-1000

更新时间: 2024-11-25 14:53:55
品牌 Logo 应用领域
WON-TOP /
页数 文件大小 规格书
4页 41K
描述
Axial

BY550-1000 技术参数

生命周期:Active零件包装代码:DO-201AD
包装说明:O-PALF-W2针数:2
Reach Compliance Code:compliantHTS代码:8541.10.00.80
风险等级:5.26Is Samacsys:N
其他特性:HIGH RELIABILITY应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
最大非重复峰值正向电流:300 A元件数量:1
相数:1端子数量:2
最高工作温度:125 °C最低工作温度:-65 °C
最大输出电流:5 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
最大重复峰值反向电压:1000 V表面贴装:NO
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

BY550-1000 数据手册

 浏览型号BY550-1000的Datasheet PDF文件第2页浏览型号BY550-1000的Datasheet PDF文件第3页浏览型号BY550-1000的Datasheet PDF文件第4页 
®
BY550-50 – BY550-1000  
5.0A STANDARD DIODE  
WON-TOP ELECTRONICS  
Features  
Diffused Junction  
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
A
B
A
High Surge Current Capability  
Mechanical Data  
C
Case: DO-201AD, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 1.2 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
D
DO-201AD  
Min  
Dim  
A
Max  
25.4  
B
7.20  
9.50  
1.30  
5.30  
C
1.20  
D
4.80  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
BY550 BY550 BY550 BY550 BY550 BY550 BY550  
Characteristic  
Symbol  
Unit  
-50  
-100  
-200  
-400  
-600  
-800 -1000  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
100  
200  
400  
600  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
35  
70  
140  
280  
5.0  
420  
V
A
Average Rectified Output Current (Note 1) @TA = 75°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
300  
1.1  
A
Forward Voltage  
@IF = 5.0A  
VFM  
IRM  
V
Peak Reverse Current  
@TA = 25°C  
20  
100  
µA  
At Rated DC Blocking Voltage  
@TA = 100°C  
Typical Junction Capacitance (Note 2)  
CJ  
RθJA  
TJ  
40  
pF  
°C/W  
°C  
Typical Thermal Resistance Junction to Ambient (Note 1)  
Operating Temperature Range  
20  
-65 to +125  
-65 to +150  
Storage Temperature Range  
TSTG  
°C  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1

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