SILICON RECTIFIER DIODES
DO - 201AD
BY550-50 ~ BY550-1000
PRV : 50 - 1000 Volts
Io : 5.0 Amperes
FEATURES :
1.00 (25.4)
0.21 (5.33)
MIN.
* High current capability
* High surge current capability
* High reliability
0.19 (4.83)
0.375 (9.53)
0.285 (7.24)
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
1.00 (25.4)
0.052 (1.32)
MIN.
MECHANICAL DATA :
0.048 (1.22)
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
Dimensions in inches and ( millimeters )
* Weight : 0.929 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
BY550 BY550 BY550 BY550 BY550 BY550 BY550
RATING
SYMBOL
UNIT
- 50
- 100
- 200
- 400
- 600
- 800
- 1000
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
100
200
400
600
800
1000
V
V
V
35
50
70
140
200
280
400
420
600
560
800
700
Maximum DC Blocking Voltage
100
1000
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 60°C
Peak Forward Surge Current
IF
5.0
A
IFSM
300
A
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 5.0 Amps.
VF
IR
1.1
20
50
50
18
V
μA
Maximum DC Reverse Current
at rated DC Blocking Voltage
Ta = 25 °C
Ta = 100 °C
IR(H)
CJ
μA
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
pF
°C/W
°C
RθJA
TJ
- 65 to + 175
- 65 to + 175
Storage Temperature Range
TSTG
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
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Rev. 03 : March 31, 2005