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BY527TAP PDF预览

BY527TAP

更新时间: 2024-11-20 13:06:03
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 120K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2A, 800V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

BY527TAP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.66
Is Samacsys:N应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:E-LALF-W2
JESD-609代码:e2湿度敏感等级:1
最大非重复峰值正向电流:50 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:2 A封装主体材料:GLASS
封装形状:ELLIPTICAL封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:800 V最大反向恢复时间:4 µs
子类别:Rectifier Diodes表面贴装:NO
技术:AVALANCHE端子面层:Tin/Silver (Sn/Ag)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BY527TAP 数据手册

 浏览型号BY527TAP的Datasheet PDF文件第2页浏览型号BY527TAP的Datasheet PDF文件第3页浏览型号BY527TAP的Datasheet PDF文件第4页 
BY527  
Vishay Semiconductors  
Standard Avalanche Sinterglass Diode  
FEATURES  
• Controlled avalanche characteristics  
• Glass passivated junction  
• Hermetically sealed package  
• Low reverse current  
• High surge current capability  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
949539  
• Halogen-free according to IEC 61249-2-21 definition  
MECHANICAL DATA  
Case: SOD-57  
APPLICATIONS  
• General purpose  
Terminals: plated axial leads, solderable per MIL-STD-750,  
method 2026  
Polarity: color band denotes cathode end  
Mounting position: any  
Weight: approx. 369 mg  
PARTS TABLE  
PART  
TYPE DIFFERENTIATION  
R = 800 V; IFAV = 2 A  
PACKAGE  
BY527  
V
SOD-57  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VRSM  
VR  
VALUE  
1250  
800  
50  
UNIT  
Reverse voltage, non repetitive  
Reverse voltage  
l
R = 100 μA  
V
V
See electrical characteristics  
tp = 10 ms, half sine wave  
Peak forward surge current  
Repetitive peak forward current  
Average forward current  
Pulse avalanche peak power  
IFSM  
A
A
A
W
lFRM  
12  
ϕ = 180°  
IFAV  
2
Tj = 175 °C, tp = 20 μs, half sinus wave  
PR  
1000  
Pulse energy in avalanche mode, non  
repetitive (inductive load switch off)  
l
(BR)R = 1 A, Tj = 175 °C  
ER  
20  
mJ  
i2t rating  
i2 t  
8
A2 s  
°C  
Junction and storage temperature range  
Tj = Tstg  
-55 to + 175  
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Lead length l = 10 mm, TL = constant  
On PC board with spacing 25 mm  
RthJA  
45  
K/W  
K/W  
Junction ambient  
RthJA  
100  
www.vishay.com  
150  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number: 86007  
Rev. 1.7, 25-Aug-10  

BY527TAP 替代型号

型号 品牌 替代类型 描述 数据表
BY527-TR VISHAY

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DIODE 2 A, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rec
BY527-TAP VISHAY

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DIODE 2 A, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rec

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