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BY527_05 PDF预览

BY527_05

更新时间: 2024-11-08 06:44:51
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
6页 131K
描述
Standard Avalanche Sinterglass Diode

BY527_05 数据手册

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BY527  
Vishay Semiconductors  
Standard Avalanche Sinterglass Diode  
Features  
• Controlled avalanche characteristics  
• Glass passivated junction  
e2  
• Hermetically sealed package  
• Low reverse current  
• High surge current capability  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
949539  
Applications  
Mechanical Data  
General purpose  
Case: SOD-57 Sintered glass case  
Terminals: Plated axial leads, solderable per  
MIL-STD-750, Method 2026  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Weight: approx. 369 mg  
Parts Table  
Part  
Type differentiation  
VR = 800 V; IFAV = 2 A  
Package  
BY527  
SOD-57  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
IR = 100 µA  
Symbol  
VRSM  
Value  
Unit  
V
Peak reverse voltage, non  
repetitive  
1250  
Reverse voltage  
see electrical characteristics  
tp = 10 ms, half sinewave  
VR  
IFSM  
IFRM  
IFAV  
PR  
800  
50  
V
A
Peak forward surge current  
Repetitive peak forward current  
Average forward current  
Pulse avalanche peak power  
12  
A
ϕ = 180 °  
2
A
Tj = 175 °C, tp = 20 µs,  
1000  
W
half sinus wave  
Pulse energy in avalanche  
mode, non repetitive (inductive  
load switch off)  
I
(BR)R = 1 A, Tj = 175 °C  
ER  
20  
mJ  
i2 * t-rating  
i2*t  
A2*s  
°C  
8
Junction and storage  
temperature range  
Tj = Tstg  
- 55 to + 175  
Document Number 86007  
Rev. 1.6, 14-Apr-05  
www.vishay.com  
1

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