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BY228-13-TAP PDF预览

BY228-13-TAP

更新时间: 2024-11-11 20:10:51
品牌 Logo 应用领域
威世 - VISHAY 局域网功效二极管
页数 文件大小 规格书
4页 109K
描述
DIODE 3 A, 1300 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode

BY228-13-TAP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:E-LALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.75应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.5 VJESD-30 代码:E-LALF-W2
JESD-609代码:e2湿度敏感等级:1
最大非重复峰值正向电流:50 A元件数量:1
相数:1端子数量:2
最高工作温度:140 °C最大输出电流:3 A
封装主体材料:GLASS封装形状:ELLIPTICAL
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:1300 V
最大反向恢复时间:20 µs子类别:Rectifier Diodes
表面贴装:NO技术:AVALANCHE
端子面层:Tin/Silver (Sn/Ag)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BY228-13-TAP 数据手册

 浏览型号BY228-13-TAP的Datasheet PDF文件第2页浏览型号BY228-13-TAP的Datasheet PDF文件第3页浏览型号BY228-13-TAP的Datasheet PDF文件第4页 
BY228/13 / BY228/15  
Vishay Semiconductors  
Standard Avalanche Sinterglass Diode  
Features  
• Glass passivated junction  
• Hermetically sealed package  
e2  
• Lead (Pb)-free component  
949588  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Applications  
Mechanical Data  
High voltage rectification  
Case: SOD-64 Sintered glass case  
Efficiency diode in horizontal deflection circuits  
Terminals: Plated axial leads, solderable per  
MIL-STD-750, Method 2026  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Weight: approx. 858 mg  
Parts Table  
Part  
Type differentiation  
VR = 1000 V; IFAV = 3 A  
R = 1200 V; IFAV = 3 A  
Package  
BY228-13  
BY228-15  
SOD-64  
SOD-64  
V
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
IR = 100 µA  
Part  
Symbol  
Value  
Unit  
V
Peak reverse voltage, non  
repetitive  
BY228/13  
VRSM  
1300  
BY228/15  
BY228/13  
BY228/15  
VRSM  
VR  
1500  
V
V
Reverse voltage  
see electrical characteristics  
tp = 10 ms, half sinewave  
1000  
VR  
1200  
V
Peak forward surge current  
Average forward current  
Junction temperature  
IFSM  
IFAV  
Tj  
50  
A
3
140  
A
°C  
°C  
mJ  
Storage temperature range  
Tstg  
ER  
- 55 to + 175  
10  
Non repetitive reverse  
avalanche energy  
I(BR)R = 0.4 A  
Maximum Thermal Resistance  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Junction ambient  
Test condition  
Symbol  
RthJA  
Value  
70  
Unit  
on PC board with spacing  
25 mm  
K/W  
Document Number 86004  
Rev. 1.6, 14-Apr-05  
www.vishay.com  
1

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