WTE
PO WER SEM ICONDUCTORS
BY133
1.0A SILICON RECTIFIER
Features
!
Diffused Junction
!
!
!
!
Low Forward Voltage Drop
High Current Capability
High Reliability
A
B
A
High Surge Current Capability
Mechanical Data
C
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!
Case: Molded Plastic
D
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.35 grams (approx.)
Mounting Position: Any
DO-41
Dim
A
Min
25.4
4.06
0.71
2.00
Max
—
!
!
!
!
B
5.21
0.864
2.72
C
Marking: Type Number
D
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
BY133
Unit
VRRM
VRWM
VR
1300
V
RMS Reverse Voltage
VR(RMS)
IO
910
1.0
V
A
Average Rectified Output Current (Note 1)
@TA = 75°C
Non-Repetitive Peak Forward Surge Current 8.3ms Single
half sine-wave superimposed on rated load (JEDEC Method)
IFSM
VFM
IRM
30
A
V
Forward Voltage
@IF = 1.0A
1.0
Peak Reverse Current
@TA = 25°C
5.0
50
µA
At Rated DC Blocking Voltage
@TA = 100°C
Typical Junction Capacitance (Note 2)
Cj
RꢀJA
Tj
15
pF
K/W
°C
Typical Thermal Resistance Junction to Ambient (Note 1)
Operating Temperature Range
50
-65 to +125
-65 to +150
Storage Temperature Range
TSTG
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
BY133
1 of 3
© 2002 Won-Top Electronics