BY133-T3

更新时间： 2024-01-23 05:53:19

品牌	Logo	应用领域
WTE		二极管
页数	文件大小	规格书
3页	49K
描述
1.0A SILICON RECTIFIER

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中文翻译

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数据手册

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BY133-T3 数据手册

WTE

PO WER SEM ICONDUCTORS

BY133

1.0A SILICON RECTIFIER

Features

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Mechanical Data

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 0.35 grams (approx.)

Mounting Position: Any

DO-41

Dim

Min

25.4

4.06

0.71

2.00

Max

—

5.21

0.864

2.72

Marking: Type Number

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Symbol

BY133

Unit

V^RRM

V^RWM

V^R

1300

RMS Reverse Voltage

V^R(RMS)

I^O

910

1.0

Average Rectified Output Current (Note 1)

@T_A= 75°C

Non-Repetitive Peak Forward Surge Current 8.3ms Single

half sine-wave superimposed on rated load (JEDEC Method)

I^FSM

V^FM

I^RM

Forward Voltage

@I_F= 1.0A

1.0

Peak Reverse Current

@T_A= 25°C

5.0

µA

At Rated DC Blocking Voltage

@T_A= 100°C

Typical Junction Capacitance (Note 2)

C^j

R^ꢀ^JA

T^j

K/W

°C

Typical Thermal Resistance Junction to Ambient (Note 1)

Operating Temperature Range

-65 to +125

-65 to +150

Storage Temperature Range

T^STG

°C

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case

2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.

BY133

1 of 3

12 3

中文翻译

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